Source: Proceedings. Conference titles: Congress of the Brazilian Microelectronics Society. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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BOTTECCHIA, J P e ANDRADE, Adnei Melges de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. 1995, Anais.. Porto Alegre: Instituto de Informatica da Ufrgs, 1995. . Acesso em: 15 ago. 2024.APA
Bottecchia, J. P., & Andrade, A. M. de. (1995). Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. In Proceedings. Porto Alegre: Instituto de Informatica da Ufrgs.NLM
Bottecchia JP, Andrade AM de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. Proceedings. 1995 ;[citado 2024 ago. 15 ]Vancouver
Bottecchia JP, Andrade AM de. Influence of the pecvd reactor architecture in deposition parameters in the structural and electrical characteristics of the a-'SI': h films. Proceedings. 1995 ;[citado 2024 ago. 15 ]