Source: Proceedings. Conference titles: Conference of the Brazilian Microelectronics Society. Unidade: EP
Subjects: CIRCUITOS INTEGRADOS, SEMICONDUTORES
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ABNT
OKA, Mauricio Massazumi et al. Formation of very low leakage current pn junction by low temperature annealing assisted by Xe-lap irradiation. (em CD-Rom). 1997, Anais.. Itajubá: SBMICRO/EFEI, 1997. . Acesso em: 18 out. 2024.APA
Oka, M. M., Nakada, A., Tamai, Y., Shibata, T., & Ohmi, T. (1997). Formation of very low leakage current pn junction by low temperature annealing assisted by Xe-lap irradiation. (em CD-Rom). In Proceedings. Itajubá: SBMICRO/EFEI.NLM
Oka MM, Nakada A, Tamai Y, Shibata T, Ohmi T. Formation of very low leakage current pn junction by low temperature annealing assisted by Xe-lap irradiation. (em CD-Rom). Proceedings. 1997 ;[citado 2024 out. 18 ]Vancouver
Oka MM, Nakada A, Tamai Y, Shibata T, Ohmi T. Formation of very low leakage current pn junction by low temperature annealing assisted by Xe-lap irradiation. (em CD-Rom). Proceedings. 1997 ;[citado 2024 out. 18 ]
