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Artigo de periodico
Two-dimensional van der Waals p-n junction of 'IN''SE'/phosphorene (2017)
Padilha, J. E.; Miwa, R. H.; Fazzio, Adalberto ; Silva, Antônio José Roque da
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assuntos: NANOTECNOLOGIA, SEMICONDUTORES
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ABNT
PADILHA, J. E. et al. Two-dimensional van der Waals p-n junction of 'IN''SE'/phosphorene. PHYSICAL REVIEW B, v. 95, n. 19, p. 195143, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.95.195143. Acesso em: 03 nov. 2025.
APA
Padilha, J. E., Miwa, R. H., Fazzio, A., & Silva, A. J. R. da. (2017). Two-dimensional van der Waals p-n junction of 'IN''SE'/phosphorene. PHYSICAL REVIEW B, 95( 19), 195143. doi:10.1103/PhysRevB.95.195143
NLM
Padilha JE, Miwa RH, Fazzio A, Silva AJR da. Two-dimensional van der Waals p-n junction of 'IN''SE'/phosphorene [Internet]. PHYSICAL REVIEW B. 2017 ; 95( 19): 195143.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.95.195143
Vancouver
Padilha JE, Miwa RH, Fazzio A, Silva AJR da. Two-dimensional van der Waals p-n junction of 'IN''SE'/phosphorene [Internet]. PHYSICAL REVIEW B. 2017 ; 95( 19): 195143.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.95.195143
Artigo de periodico
General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond (2017)
Lucatto, Bruno; Pela, Ronaldo Rodrigues; Marques, Marcelo; Teles, Lara K; Assali, Lucy Vitoria Credidio
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assuntos: SEMICONDUTORES, SPIN
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ABNT
LUCATTO, Bruno et al. General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond. PHYSICAL REVIEW B, v. 96, n. 7, p. 075145, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.96.075145. Acesso em: 03 nov. 2025.
APA
Lucatto, B., Pela, R. R., Marques, M., Teles, L. K., & Assali, L. V. C. (2017). General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond. PHYSICAL REVIEW B, 96( 7), 075145. doi:10.1103/PhysRevB.96.075145
NLM
Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond [Internet]. PHYSICAL REVIEW B. 2017 ; 96( 7): 075145.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.96.075145
Vancouver
Lucatto B, Pela RR, Marques M, Teles LK, Assali LVC. General procedure for the calculation of accurate defect excitation energies from DFT-1/2 band structures: the case of the NV − center in diamond [Internet]. PHYSICAL REVIEW B. 2017 ; 96( 7): 075145.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.96.075145
Artigo de periodico
Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells (2016)
Ullah, Saeed; Bakarov, A. K.; Gusev, Gennady; Gonzalez Hernandez, Felix Guillermo
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assuntos: SEMICONDUTORES, SPIN
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ABNT
ULLAH, Saeed et al. Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells. PHYSICAL REVIEW B, v. 94, n. 4, p. 045313, 2016Tradução . . Disponível em: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.045313. Acesso em: 03 nov. 2025.
APA
Ullah, S., Bakarov, A. K., Gusev, G., & Gonzalez Hernandez, F. G. (2016). Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells. PHYSICAL REVIEW B, 94( 4), 045313. doi:10.1063/1.4953007
NLM
Ullah S, Bakarov AK, Gusev G, Gonzalez Hernandez FG. Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells [Internet]. PHYSICAL REVIEW B. 2016 ; 94( 4): 045313.[citado 2025 nov. 03 ] Available from: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.045313
Vancouver
Ullah S, Bakarov AK, Gusev G, Gonzalez Hernandez FG. Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells [Internet]. PHYSICAL REVIEW B. 2016 ; 94( 4): 045313.[citado 2025 nov. 03 ] Available from: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.045313
Artigo de periodico
Light-induced polaron magnetization in 'EU''TE' at temperatures reaching 150 K (2016)
Henriques, André Bohomoletz ; Galgano, G. D.; Rappl, P. H. O.; Abramof, E.
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assuntos: SEMICONDUTORES, MAGNETISMO
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ABNT
HENRIQUES, André Bohomoletz et al. Light-induced polaron magnetization in 'EU''TE' at temperatures reaching 150 K. PHYSICAL REVIEW B, v. 93, n. 20, p. 201201, 2016Tradução . . Disponível em: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.201201. Acesso em: 03 nov. 2025.
APA
Henriques, A. B., Galgano, G. D., Rappl, P. H. O., & Abramof, E. (2016). Light-induced polaron magnetization in 'EU''TE' at temperatures reaching 150 K. PHYSICAL REVIEW B, 93( 20), 201201. doi:10.1103/PhysRevB.93.201201
NLM
Henriques AB, Galgano GD, Rappl PHO, Abramof E. Light-induced polaron magnetization in 'EU''TE' at temperatures reaching 150 K [Internet]. PHYSICAL REVIEW B. 2016 ; 93( 20): 201201.[citado 2025 nov. 03 ] Available from: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.201201
Vancouver
Henriques AB, Galgano GD, Rappl PHO, Abramof E. Light-induced polaron magnetization in 'EU''TE' at temperatures reaching 150 K [Internet]. PHYSICAL REVIEW B. 2016 ; 93( 20): 201201.[citado 2025 nov. 03 ] Available from: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.201201
Artigo de periodico
Magnetoresistance of doped silicon (2015)
Silva, Antonio Ferreira da; Boudinov, Henri; Sernelius, Bo E.; Momtaz, Zahra Sadre; Levine, Alexandre
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assuntos: SEMICONDUTORES, MAGNETISMO
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ABNT
SILVA, Antonio Ferreira da et al. Magnetoresistance of doped silicon. PHYSICAL REVIEW B, v. 91, n. ju 2015, p. 214414, 2015Tradução . . Disponível em: https://doi.org/10.1103/physrevb.91.214414. Acesso em: 03 nov. 2025.
APA
Silva, A. F. da, Boudinov, H., Sernelius, B. E., Momtaz, Z. S., & Levine, A. (2015). Magnetoresistance of doped silicon. PHYSICAL REVIEW B, 91( ju 2015), 214414. doi:10.1103/physrevb.91.214414
NLM
Silva AF da, Boudinov H, Sernelius BE, Momtaz ZS, Levine A. Magnetoresistance of doped silicon [Internet]. PHYSICAL REVIEW B. 2015 ; 91( ju 2015): 214414.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/physrevb.91.214414
Vancouver
Silva AF da, Boudinov H, Sernelius BE, Momtaz ZS, Levine A. Magnetoresistance of doped silicon [Internet]. PHYSICAL REVIEW B. 2015 ; 91( ju 2015): 214414.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/physrevb.91.214414
Artigo de periodico
First-principles study of group III impurity doped 'PB''SE': bulk and nanowire (2013)
Wrasse, E O; Baierle, R. J.; Schmidt, T. M.; Fazzio, Adalberto
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
WRASSE, E O et al. First-principles study of group III impurity doped 'PB''SE': bulk and nanowire. PHYSICAL REVIEW B, v. fe2013, n. 8, p. 085428, 2013Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.87.085428. Acesso em: 03 nov. 2025.
APA
Wrasse, E. O., Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2013). First-principles study of group III impurity doped 'PB''SE': bulk and nanowire. PHYSICAL REVIEW B, fe2013( 8), 085428. doi:10.1103/PhysRevB.87.085428
NLM
Wrasse EO, Baierle RJ, Schmidt TM, Fazzio A. First-principles study of group III impurity doped 'PB''SE': bulk and nanowire [Internet]. PHYSICAL REVIEW B. 2013 ; fe2013( 8): 085428.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.87.085428
Vancouver
Wrasse EO, Baierle RJ, Schmidt TM, Fazzio A. First-principles study of group III impurity doped 'PB''SE': bulk and nanowire [Internet]. PHYSICAL REVIEW B. 2013 ; fe2013( 8): 085428.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.87.085428
Artigo de periodico
Observation of the intrinsic spin Hall effect in a two-dimensional electron gas (2013)
Gonzalez Hernandez, Felix Guillermo ; Bakarov, A. K.; Nunes, Leonardo Martins; Gusev, Gennady
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assuntos: CAMPO MAGNÉTICO, SEMICONDUTORES
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ABNT
GONZALEZ HERNANDEZ, Felix Guillermo et al. Observation of the intrinsic spin Hall effect in a two-dimensional electron gas. PHYSICAL REVIEW B, v. 88, n. 16, p. 161305, 2013Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.88.161305. Acesso em: 03 nov. 2025.
APA
Gonzalez Hernandez, F. G., Bakarov, A. K., Nunes, L. M., & Gusev, G. (2013). Observation of the intrinsic spin Hall effect in a two-dimensional electron gas. PHYSICAL REVIEW B, 88( 16), 161305. doi:10.1103/PhysRevB.88.161305
NLM
Gonzalez Hernandez FG, Bakarov AK, Nunes LM, Gusev G. Observation of the intrinsic spin Hall effect in a two-dimensional electron gas [Internet]. PHYSICAL REVIEW B. 2013 ; 88( 16): 161305.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.88.161305
Vancouver
Gonzalez Hernandez FG, Bakarov AK, Nunes LM, Gusev G. Observation of the intrinsic spin Hall effect in a two-dimensional electron gas [Internet]. PHYSICAL REVIEW B. 2013 ; 88( 16): 161305.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.88.161305
Artigo de periodico
Quantum conﬁnement and spin-orbit interactions in 'PB''SE' and 'PB''TE' nanowires: first-principles calculation (2011)
Wrasse, E O; Baierle, R. J; Schmidt, T M; Fazzio, Adalberto
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
WRASSE, E O et al. Quantum conﬁnement and spin-orbit interactions in 'PB''SE' and 'PB''TE' nanowires: first-principles calculation. PHYSICAL REVIEW B, v. 84, n. 24, p. 245324, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.245324. Acesso em: 03 nov. 2025.
APA
Wrasse, E. O., Baierle, R. J., Schmidt, T. M., & Fazzio, A. (2011). Quantum conﬁnement and spin-orbit interactions in 'PB''SE' and 'PB''TE' nanowires: first-principles calculation. PHYSICAL REVIEW B, 84( 24), 245324. doi:10.1103/PhysRevB.84.245324
NLM
Wrasse EO, Baierle RJ, Schmidt TM, Fazzio A. Quantum conﬁnement and spin-orbit interactions in 'PB''SE' and 'PB''TE' nanowires: first-principles calculation [Internet]. PHYSICAL REVIEW B. 2011 ;84( 24): 245324.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.84.245324
Vancouver
Wrasse EO, Baierle RJ, Schmidt TM, Fazzio A. Quantum conﬁnement and spin-orbit interactions in 'PB''SE' and 'PB''TE' nanowires: first-principles calculation [Internet]. PHYSICAL REVIEW B. 2011 ;84( 24): 245324.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.84.245324
Artigo de periodico
Linear and nonlinear transport in a small charge-tunable open quantum ring (2011)
Gonzalez Hernandez, Felix Guillermo ; Kvon, Z D; Portal, J C; Gusev, G M
Fonte: PHYSICAL REVIEW B. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GONZALEZ HERNANDEZ, Felix Guillermo et al. Linear and nonlinear transport in a small charge-tunable open quantum ring. PHYSICAL REVIEW B, v. 84, n. 7, p. 075332, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.075332. Acesso em: 03 nov. 2025.
APA
Gonzalez Hernandez, F. G., Kvon, Z. D., Portal, J. C., & Gusev, G. M. (2011). Linear and nonlinear transport in a small charge-tunable open quantum ring. PHYSICAL REVIEW B, 84( 7), 075332. doi:10.1103/PhysRevB.84.075332
NLM
Gonzalez Hernandez FG, Kvon ZD, Portal JC, Gusev GM. Linear and nonlinear transport in a small charge-tunable open quantum ring [Internet]. PHYSICAL REVIEW B. 2011 ;84( 7): 075332.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.84.075332
Vancouver
Gonzalez Hernandez FG, Kvon ZD, Portal JC, Gusev GM. Linear and nonlinear transport in a small charge-tunable open quantum ring [Internet]. PHYSICAL REVIEW B. 2011 ;84( 7): 075332.[citado 2025 nov. 03 ] Available from: https://doi.org/10.1103/PhysRevB.84.075332

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