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Artigo de periodico
Electronic and magnetic properties of 'SN'' O IND. 2'/'CR''O IND.2' thin superlattices (2011)
Borges, Pablo D; Scolfaro, Luísa M R; Alves, Horácio W Leite; Silva, Eronides F da; Assali, L. V. C.
Source: Nanoscale Research Letters. Unidade: IF
Assunto: MATERIAIS ELETRÔNICOS
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ABNT
BORGES, Pablo D et al. Electronic and magnetic properties of 'SN'' O IND. 2'/'CR''O IND.2' thin superlattices. Nanoscale Research Letters, v. fe2011, p. 146, 2011Tradução . . Disponível em: https://doi.org/10.1186/1556-276X-6-146. Acesso em: 06 out. 2024.
APA
Borges, P. D., Scolfaro, L. M. R., Alves, H. W. L., Silva, E. F. da, & Assali, L. V. C. (2011). Electronic and magnetic properties of 'SN'' O IND. 2'/'CR''O IND.2' thin superlattices. Nanoscale Research Letters, fe2011, 146. doi:10.1186/1556-276X-6-146
NLM
Borges PD, Scolfaro LMR, Alves HWL, Silva EF da, Assali LVC. Electronic and magnetic properties of 'SN'' O IND. 2'/'CR''O IND.2' thin superlattices [Internet]. Nanoscale Research Letters. 2011 ; fe2011 146.[citado 2024 out. 06 ] Available from: https://doi.org/10.1186/1556-276X-6-146
Vancouver
Borges PD, Scolfaro LMR, Alves HWL, Silva EF da, Assali LVC. Electronic and magnetic properties of 'SN'' O IND. 2'/'CR''O IND.2' thin superlattices [Internet]. Nanoscale Research Letters. 2011 ; fe2011 146.[citado 2024 out. 06 ] Available from: https://doi.org/10.1186/1556-276X-6-146
Artigo de periodico
Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots (2011)
Villegas-Lelovsky, L.; Teodoro, M. D.; Richard, V. Lopez; Calseverino, C.; Malachias, A.; Marega Júnior, Euclydes; Liang, B. L.; Mazur, Yu I.; Marques, G. E.; Trallero-Giner, C.; Salamo, G. J.
Source: Nanoscale Research Letters. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VILLEGAS-LELOVSKY, L. et al. Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots. Nanoscale Research Letters, v. 6, n. 1, p. 56-1-56-12, 2011Tradução . . Disponível em: https://doi.org/10.1007/s11671-010-9786-8. Acesso em: 06 out. 2024.
APA
Villegas-Lelovsky, L., Teodoro, M. D., Richard, V. L., Calseverino, C., Malachias, A., Marega Júnior, E., et al. (2011). Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots. Nanoscale Research Letters, 6( 1), 56-1-56-12. doi:10.1007/s11671-010-9786-8
NLM
Villegas-Lelovsky L, Teodoro MD, Richard VL, Calseverino C, Malachias A, Marega Júnior E, Liang BL, Mazur YI, Marques GE, Trallero-Giner C, Salamo GJ. Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots [Internet]. Nanoscale Research Letters. 2011 ; 6( 1): 56-1-56-12.[citado 2024 out. 06 ] Available from: https://doi.org/10.1007/s11671-010-9786-8
Vancouver
Villegas-Lelovsky L, Teodoro MD, Richard VL, Calseverino C, Malachias A, Marega Júnior E, Liang BL, Mazur YI, Marques GE, Trallero-Giner C, Salamo GJ. Anisotropic confinement, electronic coupling and strain induced effects detected by valence-band anisotropy in self-assembled quantum dots [Internet]. Nanoscale Research Letters. 2011 ; 6( 1): 56-1-56-12.[citado 2024 out. 06 ] Available from: https://doi.org/10.1007/s11671-010-9786-8
Artigo de periodico
Study of the vertical transport in p-doped superlattices based on group III-V semiconductors (2011)
Santos, Osmar F. P.; Rodrigues, Sara C. P.; Sipahi, Guilherme Matos ; Scolfaro, Luísa M. R.; Silva Júnior, Eronides F.
Source: Nanoscale Research Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, SISTEMAS HAMILTONIANOS, CARGA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Osmar F. P. et al. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors. Nanoscale Research Letters, v. 6, n. 1, p. 175-1-175-6, 2011Tradução . . Disponível em: https://doi.org/10.1186/1556-276x-6-175. Acesso em: 06 out. 2024.
APA
Santos, O. F. P., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Silva Júnior, E. F. (2011). Study of the vertical transport in p-doped superlattices based on group III-V semiconductors. Nanoscale Research Letters, 6( 1), 175-1-175-6. doi:10.1186/1556-276x-6-175
NLM
Santos OFP, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Silva Júnior EF. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors [Internet]. Nanoscale Research Letters. 2011 ; 6( 1): 175-1-175-6.[citado 2024 out. 06 ] Available from: https://doi.org/10.1186/1556-276x-6-175
Vancouver
Santos OFP, Rodrigues SCP, Sipahi GM, Scolfaro LMR, Silva Júnior EF. Study of the vertical transport in p-doped superlattices based on group III-V semiconductors [Internet]. Nanoscale Research Letters. 2011 ; 6( 1): 175-1-175-6.[citado 2024 out. 06 ] Available from: https://doi.org/10.1186/1556-276x-6-175

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