Partially oxidized amorphous silicon as tunneling barrier for josephson devices (1986)
Fonte: Journal of Applied Physics. Unidade: EESC
Assunto: ENGENHARIA ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CELASCHI, S. Partially oxidized amorphous silicon as tunneling barrier for josephson devices. Journal of Applied Physics, v. 60, p. 296-303, 1986Tradução . . Disponível em: https://doi.org/10.1063/1.337644. Acesso em: 08 nov. 2025.APA
Celaschi, S. (1986). Partially oxidized amorphous silicon as tunneling barrier for josephson devices. Journal of Applied Physics, 60, 296-303. doi:10.1063/1.337644NLM
Celaschi S. Partially oxidized amorphous silicon as tunneling barrier for josephson devices [Internet]. Journal of Applied Physics. 1986 ; 60 296-303.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.337644Vancouver
Celaschi S. Partially oxidized amorphous silicon as tunneling barrier for josephson devices [Internet]. Journal of Applied Physics. 1986 ; 60 296-303.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.337644
