Partially oxidized amorphous silicon as tunneling barrier for josephson devices

Partially oxidized amorphous silicon as tunneling barrier for josephson devices (1986)

Autor:
- Celaschi, S
Autor USP: CELASCHI, SERGIO - EESC
Unidade: EESC
DOI: 10.1063/1.337644
Assunto: ENGENHARIA ELÉTRICA
Language: Português
Source:
- Título: Journal of Applied Physics
- Volume/Número/Paginação/Ano: v. 60, p. 296-303, feb. 1986

Informações sobre o DOI: 10.1063/1.337644 (Fonte: oaDOI API)

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ABNT

CELASCHI, S. Partially oxidized amorphous silicon as tunneling barrier for josephson devices. Journal of Applied Physics, v. 60, p. 296-303, 1986Tradução . . Disponível em: https://doi.org/10.1063/1.337644. Acesso em: 25 jan. 2026.
APA

Celaschi, S. (1986). Partially oxidized amorphous silicon as tunneling barrier for josephson devices. Journal of Applied Physics, 60, 296-303. doi:10.1063/1.337644
NLM

Celaschi S. Partially oxidized amorphous silicon as tunneling barrier for josephson devices [Internet]. Journal of Applied Physics. 1986 ; 60 296-303.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1063/1.337644
Vancouver

Celaschi S. Partially oxidized amorphous silicon as tunneling barrier for josephson devices [Internet]. Journal of Applied Physics. 1986 ; 60 296-303.[citado 2026 jan. 25 ] Available from: https://doi.org/10.1063/1.337644