ReP USP - Resultado da busca

Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A ; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 08 nov. 2025.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Junior, Euclydes ; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 08 nov. 2025.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure (2012)
Teodoro, M. D.; Malachias, A.; Oliveira, V. Lopes; Cesar, D. F.; Richard, V. Lopez; Marques, G. E.; Marega Junior, Euclydes ; Benamara, M.; Mazur, Yu. I.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, ELÉTRONS, DIFRAÇÃO POR RAIOS X, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TEODORO, M. D. et al. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, v. 112, n. 1, p. 014319-1-014319-9, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4733964. Acesso em: 08 nov. 2025.
APA
Teodoro, M. D., Malachias, A., Oliveira, V. L., Cesar, D. F., Richard, V. L., Marques, G. E., et al. (2012). In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure. Journal of Applied Physics, 112( 1), 014319-1-014319-9. doi:10.1063/1.4733964
NLM
Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Junior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4733964
Vancouver
Teodoro MD, Malachias A, Oliveira VL, Cesar DF, Richard VL, Marques GE, Marega Junior E, Benamara M, Mazur YI, Salamo GJ. In-plane mapping of buried 'In''Ga''As' quantum rings and hybridization effects on the electronic structure [Internet]. Journal of Applied Physics. 2012 ; 112( 1): 014319-1-014319-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.4733964
Artigo de periodico
Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa (2008)
Teodoro, M. D.; Dias, I. F. L.; Laureto, E.; Duarte, J. L.; Borrero, P. P. González; Lourenço, S. A.; Mazzaro, I.; Marega Junior, Euclydes ; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES, GASES, TEMPERATURA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TEODORO, M. D. et al. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, v. 103, n. 9, p. 093508-1-093508-7, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2913513. Acesso em: 08 nov. 2025.
APA
Teodoro, M. D., Dias, I. F. L., Laureto, E., Duarte, J. L., Borrero, P. P. G., Lourenço, S. A., et al. (2008). Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa. Journal of Applied Physics, 103( 9), 093508-1-093508-7. doi:10.1063/1.2913513
NLM
Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2913513
Vancouver
Teodoro MD, Dias IFL, Laureto E, Duarte JL, Borrero PPG, Lourenço SA, Mazzaro I, Marega Junior E, Salamo GJ. Substrate orientation effect on potential fluctuations in multiquantum wells of GaAs/AlGa [Internet]. Journal of Applied Physics. 2008 ; 103( 9): 093508-1-093508-7.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.2913513

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