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Filtros : "Applied Physics Letters" "2025" Removido: "Indexado em Inspec" Limpar

Filtros

Artigo de periodico
Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)
Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.
Fonte: Applied Physics Letters. Unidade: IF
Assuntos: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 04 nov. 2025.
APA
Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331
NLM
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Vancouver
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Artigo de periodico
Strain-induced topological transitions in epitaxial films of cadmium arsenide (2025)
Ahadi, Sina ; Huang, Victor ; Rashidi, Arman ; Munyan, Simon ; Smith, Michael; Quito, Victor Luiz ; Orth, Peter P. ; Martin, Ivar ; Stemmer, Susanne
Fonte: Applied Physics Letters. Unidade: IFSC
Assuntos: ESPECTROSCOPIA, FILMES FINOS, DIFRAÇÃO POR RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AHADI, Sina et al. Strain-induced topological transitions in epitaxial films of cadmium arsenide. Applied Physics Letters, v. 127, n. 3, p. 033103-1-033103-5 + supplementary material, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0281482. Acesso em: 04 nov. 2025.
APA
Ahadi, S., Huang, V., Rashidi, A., Munyan, S., Smith, M., Quito, V. L., et al. (2025). Strain-induced topological transitions in epitaxial films of cadmium arsenide. Applied Physics Letters, 127( 3), 033103-1-033103-5 + supplementary material. doi:10.1063/5.0281482
NLM
Ahadi S, Huang V, Rashidi A, Munyan S, Smith M, Quito VL, Orth PP, Martin I, Stemmer S. Strain-induced topological transitions in epitaxial films of cadmium arsenide [Internet]. Applied Physics Letters. 2025 ; 127( 3): 033103-1-033103-5 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0281482
Vancouver
Ahadi S, Huang V, Rashidi A, Munyan S, Smith M, Quito VL, Orth PP, Martin I, Stemmer S. Strain-induced topological transitions in epitaxial films of cadmium arsenide [Internet]. Applied Physics Letters. 2025 ; 127( 3): 033103-1-033103-5 + supplementary material.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0281482

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