Filtros : "Applied Physics Letters" "POUSSEP, IOURI" Removido: "1990" Limpar

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  • Source: Applied Physics Letters. Unidade: IFSC

    Subjects: NANOTECNOLOGIA, SEMICONDUTORES

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 04 nov. 2025.
    • APA

      Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
    • NLM

      Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4816288
    • Vancouver

      Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4816288
  • Source: Applied Physics Letters. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)

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    • ABNT

      PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 04 nov. 2025.
    • APA

      Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
    • NLM

      Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
    • Vancouver

      Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
  • Source: Applied Physics Letters. Unidade: IFSC

    Subjects: SEMICONDUTORES, FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, MAGNETISMO

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    • ABNT

      PUSEP, Yuri A e GOZZO, G. C. e LA PIERRE, R. R. Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, v. 93, n. 24, p. 242104-1-242104-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.3050531. Acesso em: 04 nov. 2025.
    • APA

      Pusep, Y. A., Gozzo, G. C., & La Pierre, R. R. (2008). Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, 93( 24), 242104-1-242104-3. doi:10.1063/1.3050531
    • NLM

      Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
    • Vancouver

      Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531

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