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Artigo de periodico
Photoluminescence quenching in Er-doped compounds (2003)
Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, LUMINESCÊNCIA, SEMICONDUTORES
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ABNT
ZANATTA, Antonio Ricardo. Photoluminescence quenching in Er-doped compounds. Applied Physics Letters, v. 82, n. 9, p. 1395-1397, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1557318. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R. (2003). Photoluminescence quenching in Er-doped compounds. Applied Physics Letters, 82( 9), 1395-1397. doi:10.1063/1.1557318
NLM
Zanatta AR. Photoluminescence quenching in Er-doped compounds [Internet]. Applied Physics Letters. 2003 ; 82( 9): 1395-1397.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1557318
Vancouver
Zanatta AR. Photoluminescence quenching in Er-doped compounds [Internet]. Applied Physics Letters. 2003 ; 82( 9): 1395-1397.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1557318
Artigo de periodico
Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys (2002)
Mulato, Marcelo; Zanatta, Antonio Ricardo ; Toet, D; Chambouleyron, I E
Source: Applied Physics Letters. Unidades: FFCLRP, IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
MULATO, Marcelo et al. Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys. Applied Physics Letters, v. 81, n. 15, p. 2731-2733, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1512307. Acesso em: 04 nov. 2025.
APA
Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2002). Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys. Applied Physics Letters, 81( 15), 2731-2733. doi:10.1063/1.1512307
NLM
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2731-2733.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1512307
Vancouver
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. Optical diffraction grattings produced by laser interference structuring of amorphous germanium-nitrogen alloys [Internet]. Applied Physics Letters. 2002 ; 81( 15): 2731-2733.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1512307
Artigo de periodico
Structural properties of aluminum - nitrogen films prepared at low temperature (2002)
Ribeiro, C. T. M.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
RIBEIRO, C. T. M. e ALVAREZ, F. e ZANATTA, Antonio Ricardo. Structural properties of aluminum - nitrogen films prepared at low temperature. Applied Physics Letters, v. 81, n. 6, p. 1005-1007, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1498002. Acesso em: 04 nov. 2025.
APA
Ribeiro, C. T. M., Alvarez, F., & Zanatta, A. R. (2002). Structural properties of aluminum - nitrogen films prepared at low temperature. Applied Physics Letters, 81( 6), 1005-1007. doi:10.1063/1.1498002
NLM
Ribeiro CTM, Alvarez F, Zanatta AR. Structural properties of aluminum - nitrogen films prepared at low temperature [Internet]. Applied Physics Letters. 2002 ;81( 6): 1005-1007.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1498002
Vancouver
Ribeiro CTM, Alvarez F, Zanatta AR. Structural properties of aluminum - nitrogen films prepared at low temperature [Internet]. Applied Physics Letters. 2002 ;81( 6): 1005-1007.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1498002
Artigo de periodico
Visible luminescence from a-SiN films doped with Er and Sm (2001)
Zanatta, Antonio Ricardo ; Ribeiro, C T M; Jahn, U
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C T M e JAHN, U. Visible luminescence from a-SiN films doped with Er and Sm. Applied Physics Letters, v. 79, n. 4, p. 488-490, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1389069. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Jahn, U. (2001). Visible luminescence from a-SiN films doped with Er and Sm. Applied Physics Letters, 79( 4), 488-490. doi:10.1063/1.1389069
NLM
Zanatta AR, Ribeiro CTM, Jahn U. Visible luminescence from a-SiN films doped with Er and Sm [Internet]. Applied Physics Letters. 2001 ;79( 4): 488-490.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1389069
Vancouver
Zanatta AR, Ribeiro CTM, Jahn U. Visible luminescence from a-SiN films doped with Er and Sm [Internet]. Applied Physics Letters. 2001 ;79( 4): 488-490.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1389069
Artigo de periodico
Photoelectron spectroscopic study of amoprhous GaAsN films (2000)
Zanatta, Antonio Ricardo ; Hammer, P.; Alvarez, F.
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e HAMMER, P. e ALVAREZ, F. Photoelectron spectroscopic study of amoprhous GaAsN films. Applied Physics Letters, v. 76, n. 16, p. 2211-2213, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.126299. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., Hammer, P., & Alvarez, F. (2000). Photoelectron spectroscopic study of amoprhous GaAsN films. Applied Physics Letters, 76( 16), 2211-2213. doi:10.1063/1.126299
NLM
Zanatta AR, Hammer P, Alvarez F. Photoelectron spectroscopic study of amoprhous GaAsN films [Internet]. Applied Physics Letters. 2000 ; 76( 16): 2211-2213.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.126299
Vancouver
Zanatta AR, Hammer P, Alvarez F. Photoelectron spectroscopic study of amoprhous GaAsN films [Internet]. Applied Physics Letters. 2000 ; 76( 16): 2211-2213.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.126299
Artigo de periodico
1540 nm light emission from Er-doped amorphous GaAsN films (1999)
Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo. 1540 nm light emission from Er-doped amorphous GaAsN films. Applied Physics Letters, v. 75, n. 21, p. 3279-3281, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.125324. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R. (1999). 1540 nm light emission from Er-doped amorphous GaAsN films. Applied Physics Letters, 75( 21), 3279-3281. doi:10.1063/1.125324
NLM
Zanatta AR. 1540 nm light emission from Er-doped amorphous GaAsN films [Internet]. Applied Physics Letters. 1999 ; 75( 21): 3279-3281.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.125324
Vancouver
Zanatta AR. 1540 nm light emission from Er-doped amorphous GaAsN films [Internet]. Applied Physics Letters. 1999 ; 75( 21): 3279-3281.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.125324
Artigo de periodico
Green photoluminescence from Er-containing amorphous SiN thin films (1998)
Zanatta, Antonio Ricardo ; Nunes, Luiz Antônio de Oliveira
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e NUNES, Luiz Antônio de Oliveira. Green photoluminescence from Er-containing amorphous SiN thin films. Applied Physics Letters, v. 72, n. 24, p. 3127-3129, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.121568. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., & Nunes, L. A. de O. (1998). Green photoluminescence from Er-containing amorphous SiN thin films. Applied Physics Letters, 72( 24), 3127-3129. doi:10.1063/1.121568
NLM
Zanatta AR, Nunes LA de O. Green photoluminescence from Er-containing amorphous SiN thin films [Internet]. Applied Physics Letters. 1998 ; 72( 24): 3127-3129.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.121568
Vancouver
Zanatta AR, Nunes LA de O. Green photoluminescence from Er-containing amorphous SiN thin films [Internet]. Applied Physics Letters. 1998 ; 72( 24): 3127-3129.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.121568
Artigo de periodico
Infrared spectroscopy of Er-containing amorphous silicon thin films (1997)
Zanatta, Antonio Ricardo ; Nunes, Luiz Antônio de Oliveira
Source: Applied Physics Letters. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e NUNES, Luiz Antônio de Oliveira. Infrared spectroscopy of Er-containing amorphous silicon thin films. Applied Physics Letters, v. 71, n. 25, p. 3679-3681, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.120479. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., & Nunes, L. A. de O. (1997). Infrared spectroscopy of Er-containing amorphous silicon thin films. Applied Physics Letters, 71( 25), 3679-3681. doi:10.1063/1.120479
NLM
Zanatta AR, Nunes LA de O. Infrared spectroscopy of Er-containing amorphous silicon thin films [Internet]. Applied Physics Letters. 1997 ; 71( 25): 3679-3681.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120479
Vancouver
Zanatta AR, Nunes LA de O. Infrared spectroscopy of Er-containing amorphous silicon thin films [Internet]. Applied Physics Letters. 1997 ; 71( 25): 3679-3681.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120479
Artigo de periodico
Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering (1997)
Zanatta, Antonio Ricardo ; Nunes, Luiz Antônio de Oliveira ; Tessler, L R
Source: Applied Physics Letters. Unidade: IFSC
Subjects: CIRCUITOS ELETRÔNICOS, MATÉRIA CONDENSADA
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ABNT
ZANATTA, Antonio Ricardo e NUNES, Luiz Antônio de Oliveira e TESSLER, L R. Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering. Applied Physics Letters, v. 70, n. 14, p. 511-513, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.118196. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R., Nunes, L. A. de O., & Tessler, L. R. (1997). Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering. Applied Physics Letters, 70( 14), 511-513. doi:10.1063/1.118196
NLM
Zanatta AR, Nunes LA de O, Tessler LR. Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering [Internet]. Applied Physics Letters. 1997 ; 70( 14): 511-513.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118196
Vancouver
Zanatta AR, Nunes LA de O, Tessler LR. Erbium luminescente from hydrogenated amorphous silicon-erbium prepared by cosputtering [Internet]. Applied Physics Letters. 1997 ; 70( 14): 511-513.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.118196

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