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Artigo de periodico
Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) (2005)
Miwa, R H; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, SUPERFÍCIE FÍSICA
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ABNT
MIWA, R H e ORELLANA, W e FAZZIO, Adalberto. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, v. 86, p. 213111, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1931027. Acesso em: 04 nov. 2025.
APA
Miwa, R. H., Orellana, W., & Fazzio, A. (2005). Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001). Applied Physics Letters, 86, 213111. doi:10.1063/1.1931027
NLM
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1931027
Vancouver
Miwa RH, Orellana W, Fazzio A. Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001) [Internet]. Applied Physics Letters. 2005 ; 86 213111.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1931027
Artigo de periodico
Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' (2004)
Scopel, W L; Silva, Antonio Jose Roque da; Orellana, W; Fazzio, Adalberto
Source: Applied Physics Letters. Unidade: IF
Subjects: FILMES FINOS, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOPEL, W L et al. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'. Applied Physics Letters, 2004Tradução . . Disponível em: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Scopel, W. L., Silva, A. J. R. da, Orellana, W., & Fazzio, A. (2004). Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2'. Applied Physics Letters. Recuperado de http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
NLM
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' [Internet]. Applied Physics Letters. 2004 ;[citado 2025 nov. 04 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
Vancouver
Scopel WL, Silva AJR da, Orellana W, Fazzio A. Comparative study of defect energetics in Hf'O IND.2' and Si'O IND. 2' [Internet]. Applied Physics Letters. 2004 ;[citado 2025 nov. 04 ] Available from: http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000084000009001492000001&idtype=cvips
Artigo de periodico
Stability and electronic structure of hydrogen-nitrogen complexes in GaAs (2002)
Orellana, W; Ferraz, A. C.
Source: Applied Physics Letters. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ORELLANA, W e FERRAZ, A. C. Stability and electronic structure of hydrogen-nitrogen complexes in GaAs. Applied Physics Letters, v. 81, n. 20, p. 3816-3818, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1521571. Acesso em: 04 nov. 2025.
APA
Orellana, W., & Ferraz, A. C. (2002). Stability and electronic structure of hydrogen-nitrogen complexes in GaAs. Applied Physics Letters, 81( 20), 3816-3818. doi:10.1063/1.1521571
NLM
Orellana W, Ferraz AC. Stability and electronic structure of hydrogen-nitrogen complexes in GaAs [Internet]. Applied Physics Letters. 2002 ; 81( 20): 3816-3818.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1521571
Vancouver
Orellana W, Ferraz AC. Stability and electronic structure of hydrogen-nitrogen complexes in GaAs [Internet]. Applied Physics Letters. 2002 ; 81( 20): 3816-3818.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1521571
Artigo de periodico
Ab initio study of substitutional nitrogen in GaAs (2001)
Orellana, W; Ferraz, A. C.
Source: Applied Physics Letters. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, NITROGÊNIO, ESTADO SÓLIDO, FÍSICA DA MATÉRIA CONDENSADA, FÍSICA DO ESTADO SÓLIDO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ORELLANA, W e FERRAZ, A. C. Ab initio study of substitutional nitrogen in GaAs. Applied Physics Letters, v. 78, n. 9, p. 1231-1233, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1351524. Acesso em: 04 nov. 2025.
APA
Orellana, W., & Ferraz, A. C. (2001). Ab initio study of substitutional nitrogen in GaAs. Applied Physics Letters, 78( 9), 1231-1233. doi:10.1063/1.1351524
NLM
Orellana W, Ferraz AC. Ab initio study of substitutional nitrogen in GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 9): 1231-1233.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1351524
Vancouver
Orellana W, Ferraz AC. Ab initio study of substitutional nitrogen in GaAs [Internet]. Applied Physics Letters. 2001 ; 78( 9): 1231-1233.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1351524

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