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Filtros : "Applied Physics Letters" "Avanci, L H" Removido: "Indexado no Current Contents" Limpar

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  • Artigo de periodico

    Observation of coherent hybrid reflection with synchrotron radiation (1998)

    Morelhão, S L; Avanci, L H; Hayashi, M A; Cardoso, L P; Collins, S P

    Source: Applied Physics Letters. Unidade: IF

    Assunto: FÍSICA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      MORELHÃO, S L et al. Observation of coherent hybrid reflection with synchrotron radiation. Applied Physics Letters, v. 73, n. 15, p. 2194-2196, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.122420. Acesso em: 04 nov. 2025.

    • APA

      Morelhão, S. L., Avanci, L. H., Hayashi, M. A., Cardoso, L. P., & Collins, S. P. (1998). Observation of coherent hybrid reflection with synchrotron radiation. Applied Physics Letters, 73( 15), 2194-2196. doi:10.1063/1.122420

    • NLM

      Morelhão SL, Avanci LH, Hayashi MA, Cardoso LP, Collins SP. Observation of coherent hybrid reflection with synchrotron radiation [Internet]. Applied Physics Letters. 1998 ; 73( 15): 2194-2196.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.122420

    • Vancouver

      Morelhão SL, Avanci LH, Hayashi MA, Cardoso LP, Collins SP. Observation of coherent hybrid reflection with synchrotron radiation [Internet]. Applied Physics Letters. 1998 ; 73( 15): 2194-2196.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.122420

  • Artigo de periodico

    Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors (1997)

    Hayashi, M A; Morelhão, Sérgio Luiz; Avanci, L H; Cardoso, L P; Sasaki, J M; Kretly, L C; Chang, S L

    Source: Applied Physics Letters. Unidade: IF

    Assunto: SEMICONDUTORES

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      HAYASHI, M A et al. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors. Applied Physics Letters, v. 71, n. 18, p. 2614-2616. 1997, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.120157. Acesso em: 04 nov. 2025.

    • APA

      Hayashi, M. A., Morelhão, S. L., Avanci, L. H., Cardoso, L. P., Sasaki, J. M., Kretly, L. C., & Chang, S. L. (1997). Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors. Applied Physics Letters, 71( 18), 2614-2616. 1997. doi:10.1063/1.120157

    • NLM

      Hayashi MA, Morelhão SL, Avanci LH, Cardoso LP, Sasaki JM, Kretly LC, Chang SL. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors [Internet]. Applied Physics Letters. 1997 ; 71( 18): 2614-2616. 1997.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120157

    • Vancouver

      Hayashi MA, Morelhão SL, Avanci LH, Cardoso LP, Sasaki JM, Kretly LC, Chang SL. Sensitivity Bragg surface diffraction to analyze ion-implanted semiconductors [Internet]. Applied Physics Letters. 1997 ; 71( 18): 2614-2616. 1997.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.120157
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