Subjects: ESTRUTURA ELETRÔNICA, TERMODINÂMICA
ABNT
ARANTES, J. T. e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Structural, electronic, and magnetic properties of 'MN'-doped Ge nanowires by ab initio calculations. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: https://arxiv.org/pdf/cond-mat/0608315.pdf. Acesso em: 13 nov. 2024. , 2020APA
Arantes, J. T., Fazzio, A., & Silva, A. J. R. da. (2020). Structural, electronic, and magnetic properties of 'MN'-doped Ge nanowires by ab initio calculations. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de https://arxiv.org/pdf/cond-mat/0608315.pdfNLM
Arantes JT, Fazzio A, Silva AJR da. Structural, electronic, and magnetic properties of 'MN'-doped Ge nanowires by ab initio calculations [Internet]. 2020 ;[citado 2024 nov. 13 ] Available from: https://arxiv.org/pdf/cond-mat/0608315.pdfVancouver
Arantes JT, Fazzio A, Silva AJR da. Structural, electronic, and magnetic properties of 'MN'-doped Ge nanowires by ab initio calculations [Internet]. 2020 ;[citado 2024 nov. 13 ] Available from: https://arxiv.org/pdf/cond-mat/0608315.pdf