Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering (2010)
Damiani, Larissa Rodrigues; Mansano, Ronaldo Domingues 
Fonte: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
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DAMIANI, Larissa Rodrigues e MANSANO, Ronaldo Domingues. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 117-124, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474149. Acesso em: 08 ago. 2024.APA
Damiani, L. R., & Mansano, R. D. (2010). Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 117-124. doi:10.1149/1.3474149NLM
Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.[citado 2024 ago. 08 ] Available from: https://doi.org/10.1149/1.3474149Vancouver
Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.[citado 2024 ago. 08 ] Available from: https://doi.org/10.1149/1.3474149
