Source: Proceedings. Conference titles: Conference of the Brazilian Microeletronics Society. Unidade: EP
Assunto: SEMICONDUTORES
ABNT
ALAYO CHÁVEZ, Marco Isaías e PEREYRA, Inés. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 08 out. 2024.APA
Alayo Chávez, M. I., & Pereyra, I. (1996). Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. In Proceedings. São Paulo: Sbmicro.NLM
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2024 out. 08 ]Vancouver
Alayo Chávez MI, Pereyra I. Influence of deposition parameters at the structural characteristics of silicon dioxide deposited by pecvd at low temperatures. Proceedings. 1996 ;[citado 2024 out. 08 ]