Alayo Chávez, Marco Isaías 
; Pereyra, Inés ; Scopel, Wanderla Luis ; Fantini, Márcia Carvalho de Abreu
Source: Thin Solid Films. Unidades: IF, EP
Subjects: FÍSICA DE PLASMAS, DIELÉTRICOS
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ALAYO CHÁVEZ, Marco Isaías et al. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films. Thin Solid Films, v. 402, n. 1-2, p. 154-161, 2002Tradução . . Disponível em: https://doi.org/10.1016/S0040-6090(01)01685-6. Acesso em: 04 set. 2024.APA
Alayo Chávez, M. I., Pereyra, I., Scopel, W. L., & Fantini, M. C. de A. (2002). On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films. Thin Solid Films, 402( 1-2), 154-161. doi:10.1016/S0040-6090(01)01685-6NLM
Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films [Internet]. Thin Solid Films. 2002 ; 402( 1-2): 154-161.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/S0040-6090(01)01685-6Vancouver
Alayo Chávez MI, Pereyra I, Scopel WL, Fantini MC de A. On the nitrogen and oxygen incorporation in plasma-enhanced chemical vapor deposition (PECVD) SiOxNy films [Internet]. Thin Solid Films. 2002 ; 402( 1-2): 154-161.[citado 2024 set. 04 ] Available from: https://doi.org/10.1016/S0040-6090(01)01685-6
