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Filtros : "Nogueira, R A" "Estados Unidos" Removido: "Zeitschrift Fur Metallkunde" Limpar

Filtros

Artigo de periodico
A novel approach to study the geometry of the water of the ion channels: Colicin ia channels in planar lipid bilayers (1998)
Krasilnikov, O V; Cruz, J B da; Yuldasheva, L N; Varanda, Wamberto Antônio; Nogueira, R A
Source: Journal of Membrane Biology. Unidade: FMRP
Assunto: BIOLOGIA MOLECULAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
KRASILNIKOV, O V et al. A novel approach to study the geometry of the water of the ion channels: Colicin ia channels in planar lipid bilayers. Journal of Membrane Biology, 1998Tradução . . Acesso em: 10 out. 2024.
APA
Krasilnikov, O. V., Cruz, J. B. da, Yuldasheva, L. N., Varanda, W. A., & Nogueira, R. A. (1998). A novel approach to study the geometry of the water of the ion channels: Colicin ia channels in planar lipid bilayers. Journal of Membrane Biology.
NLM
Krasilnikov OV, Cruz JB da, Yuldasheva LN, Varanda WA, Nogueira RA. A novel approach to study the geometry of the water of the ion channels: Colicin ia channels in planar lipid bilayers. Journal of Membrane Biology. 1998 ;[citado 2024 out. 10 ]
Vancouver
Krasilnikov OV, Cruz JB da, Yuldasheva LN, Varanda WA, Nogueira RA. A novel approach to study the geometry of the water of the ion channels: Colicin ia channels in planar lipid bilayers. Journal of Membrane Biology. 1998 ;[citado 2024 out. 10 ]
Artigo de periodico
Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations (1991)
Rodrigues, R; Guimaraes, P S S; Sampaio, J F; Nogueira, R A; Oliveira Junior, A T; Dias, I. F. L.; Bezerra, J C; Oliveira, A. G.; Chaves, A S; Scolfaro, L M R
Source: Solid State Communications. Unidade: IF
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, R et al. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations. Solid State Communications, v. 78, p. 793-6, 1991Tradução . . Disponível em: https://doi.org/10.1016/0038-1098(91)90622-3. Acesso em: 10 out. 2024.
APA
Rodrigues, R., Guimaraes, P. S. S., Sampaio, J. F., Nogueira, R. A., Oliveira Junior, A. T., Dias, I. F. L., et al. (1991). Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations. Solid State Communications, 78, 793-6. doi:10.1016/0038-1098(91)90622-3
NLM
Rodrigues R, Guimaraes PSS, Sampaio JF, Nogueira RA, Oliveira Junior AT, Dias IFL, Bezerra JC, Oliveira AG, Chaves AS, Scolfaro LMR. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations [Internet]. Solid State Communications. 1991 ;78 793-6.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/0038-1098(91)90622-3
Vancouver
Rodrigues R, Guimaraes PSS, Sampaio JF, Nogueira RA, Oliveira Junior AT, Dias IFL, Bezerra JC, Oliveira AG, Chaves AS, Scolfaro LMR. Broadening of the si doping layer in planar-doped gaas in the limit of high concentrations [Internet]. Solid State Communications. 1991 ;78 793-6.[citado 2024 out. 10 ] Available from: https://doi.org/10.1016/0038-1098(91)90622-3

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