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Artigo de periodico
Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field (2012)
Olshanetsky, E B; Kvon, Z D; Mikhailov, N M; Dvoretsky, S A; Gusev, G M
Source: JETP Letters. Unidade: IF
Assunto: MAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLSHANETSKY, E B et al. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, v. 96, n. 4, p. 251-254, 2012Tradução . . Disponível em: https://doi.org/10.1134/S0021364012160072. Acesso em: 16 nov. 2024.
APA
Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. M., Dvoretsky, S. A., & Gusev, G. M. (2012). Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field. JETP Letters, 96( 4), 251-254. doi:10.1134/S0021364012160072
NLM
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Vancouver
Olshanetsky EB, Kvon ZD, Mikhailov NM, Dvoretsky SA, Gusev GM. Two-dimensional semimetal-insulator transition in HgTe-based quantum wells induced by a longitudinal magnetic field [Internet]. JETP Letters. 2012 ;96( 4): 251-254.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364012160072
Artigo de periodico
Weak antilocalization in HgTe quantum wells near a topological transition (2010)
Olshanetskya, E B; Kvon, Z D; Gusev, Guennadii Michailovich ; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: JETP Letters. Unidade: IF
Assunto: POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLSHANETSKYA, E B et al. Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, v. 91, n. 7, p. 347-350, 2010Tradução . . Disponível em: https://doi.org/10.1134/S0021364010070052. Acesso em: 16 nov. 2024.
APA
Olshanetskya, E. B., Kvon, Z. D., Gusev, G. M., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, 91( 7), 347-350. doi:10.1134/S0021364010070052
NLM
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Vancouver
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Artigo de periodico
Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System (2010)
Gousev, Guennadii Michailovich; Olshanetsky, E B; Kvon, Z D; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: Physical Review Letters. Unidade: IF
Assunto: EFEITO HALL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOUSEV, Guennadii Michailovich et al. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, v. 104, n. 16, p. 166401-1 - 166401-4, 2010Tradução . . Disponível em: http://prl.aps.org/pdf/PRL/v104/i16/e166401. Acesso em: 16 nov. 2024.
APA
Gousev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, 104( 16), 166401-1 - 166401-4. Recuperado de http://prl.aps.org/pdf/PRL/v104/i16/e166401
NLM
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401
Vancouver
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401

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