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Relatorio tecnico
The resistance of 2D Topological insulator in the absence of the quantized transport (2013)
Gusev, Guennadii Michailovich; Kvon, Z D; Olshanetsky, E B; Levine, Alexandre; Krupko, Y; Portal, J C; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, MAGNETISMO (RESISTÊNCIA)
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ABNT
GUSEV, Guennadii Michailovich et al. The resistance of 2D Topological insulator in the absence of the quantized transport. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://lanl.arxiv.org/pdf/1308.4356v1.pdf. Acesso em: 16 nov. 2024. , 2013
APA
Gusev, G. M., Kvon, Z. D., Olshanetsky, E. B., Levine, A., Krupko, Y., Portal, J. C., et al. (2013). The resistance of 2D Topological insulator in the absence of the quantized transport. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://lanl.arxiv.org/pdf/1308.4356v1.pdf
NLM
Gusev GM, Kvon ZD, Olshanetsky EB, Levine A, Krupko Y, Portal JC, Mikhailov NN, Dvoretsky SA. The resistance of 2D Topological insulator in the absence of the quantized transport [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://lanl.arxiv.org/pdf/1308.4356v1.pdf
Vancouver
Gusev GM, Kvon ZD, Olshanetsky EB, Levine A, Krupko Y, Portal JC, Mikhailov NN, Dvoretsky SA. The resistance of 2D Topological insulator in the absence of the quantized transport [Internet]. 2013 ;[citado 2024 nov. 16 ] Available from: http://lanl.arxiv.org/pdf/1308.4356v1.pdf
Artigo de periodico
Transport in disordered two-dimensional topological insulators (2011)
Gusev, G M ; Kvon, Z D; Shegai, O A; Mikhailov, N N; Dvoretsky, S A; Portal, J C
Source: PHYSICAL REVIEW D. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, v. 84, n. 12, p. 121302, 2011Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.84.121302. Acesso em: 16 nov. 2024.
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2011). Transport in disordered two-dimensional topological insulators. PHYSICAL REVIEW D, 84( 12), 121302. doi:10.1103/PhysRevB.84.121302
NLM
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Mikhailov NN, Dvoretsky SA, Portal JC. Transport in disordered two-dimensional topological insulators [Internet]. PHYSICAL REVIEW D. 2011 ;84( 12): 121302.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1103/PhysRevB.84.121302
Relatorio tecnico
Transport in disordered two-dimensional topological insulator (2011)
Gusev, G M; Kvon, Z D; Shegai, O A; Portal, J C; Mikhailov, N N; Dvoretsky, S A
Unidade: IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GUSEV, G M et al. Transport in disordered two-dimensional topological insulator. . São Paulo: Instituto de Física, Universidade de São Paulo. Disponível em: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf. Acesso em: 16 nov. 2024. , 2011
APA
Gusev, G. M., Kvon, Z. D., Shegai, O. A., Portal, J. C., Mikhailov, N. N., & Dvoretsky, S. A. (2011). Transport in disordered two-dimensional topological insulator. São Paulo: Instituto de Física, Universidade de São Paulo. Recuperado de http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
NLM
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Vancouver
Gusev GM, Kvon ZD, Shegai OA, Portal JC, Mikhailov NN, Dvoretsky SA. Transport in disordered two-dimensional topological insulator [Internet]. 2011 ;[citado 2024 nov. 16 ] Available from: http://arxiv.org/PS_cache/arxiv/pdf/1106/1106.1824v1.pdf
Artigo de periodico
Weak antilocalization in HgTe quantum wells near a topological transition (2010)
Olshanetskya, E B; Kvon, Z D; Gusev, Guennadii Michailovich ; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: JETP Letters. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
OLSHANETSKYA, E B et al. Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, v. 91, n. 7, p. 347-350, 2010Tradução . . Disponível em: https://doi.org/10.1134/S0021364010070052. Acesso em: 16 nov. 2024.
APA
Olshanetskya, E. B., Kvon, Z. D., Gusev, G. M., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Weak antilocalization in HgTe quantum wells near a topological transition. JETP Letters, 91( 7), 347-350. doi:10.1134/S0021364010070052
NLM
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Vancouver
Olshanetskya EB, Kvon ZD, Gusev GM, Mikhailov NN, Dvoretsky SA, Portal JC. Weak antilocalization in HgTe quantum wells near a topological transition [Internet]. JETP Letters. 2010 ; 91( 7): 347-350.[citado 2024 nov. 16 ] Available from: https://doi.org/10.1134/S0021364010070052
Artigo de periodico
Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System (2010)
Gousev, Guennadii Michailovich; Olshanetsky, E B; Kvon, Z D; Mikhailov, Nikolai N; Dvoretsky, S A; Portal, J C
Source: Physical Review Letters. Unidade: IF
Assunto: EFEITO HALL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GOUSEV, Guennadii Michailovich et al. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, v. 104, n. 16, p. 166401-1 - 166401-4, 2010Tradução . . Disponível em: http://prl.aps.org/pdf/PRL/v104/i16/e166401. Acesso em: 16 nov. 2024.
APA
Gousev, G. M., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., Dvoretsky, S. A., & Portal, J. C. (2010). Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System. Physical Review Letters, 104( 16), 166401-1 - 166401-4. Recuperado de http://prl.aps.org/pdf/PRL/v104/i16/e166401
NLM
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401
Vancouver
Gousev GM, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA, Portal JC. Quantum Hall Effect near the Charge Neutrality Point in a Two-Dimensional Electron-Hole System [Internet]. Physical Review Letters. 2010 ; 104( 16): 166401-1 - 166401-4.[citado 2024 nov. 16 ] Available from: http://prl.aps.org/pdf/PRL/v104/i16/e166401

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