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Trabalho de evento-resumo
Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions (2022)
Kawahala, Nícolas Massarico; Gusev, Guennadii Michailovich ; Hernandez, F G G; Raichev, O E; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: FÉRMIO
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ABNT
KAWAHALA, Nícolas Massarico et al. Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 15 out. 2024.
APA
Kawahala, N. M., Gusev, G. M., Hernandez, F. G. G., Raichev, O. E., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2022). Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Kawahala NM, Gusev GM, Hernandez FGG, Raichev OE, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. Resumos. 2022 ;[citado 2024 out. 15 ]
Vancouver
Kawahala NM, Gusev GM, Hernandez FGG, Raichev OE, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Observation of weak antilocalization effects in HgTe double wells with massive Dirac fermions. Resumos. 2022 ;[citado 2024 out. 15 ]
Trabalho de evento-resumo
Thermoelectric phenomena in 2D e 3D topological insulators (2022)
Levin, A D ; Gusev, Guennadii Michailovich ; Raichev, O E; Olshanetsky, E B; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: Resumos. Conference titles: Encontro de Outono da Sociedade Brasileira de Física. Unidade: IF
Assunto: TERMOELETRICIDADE
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ABNT
LEVIN, A D et al. Thermoelectric phenomena in 2D e 3D topological insulators. 2022, Anais.. São Paulo: Sociedade Brasileira de Física, 2022. . Acesso em: 15 out. 2024.
APA
Levin, A. D., Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2022). Thermoelectric phenomena in 2D e 3D topological insulators. In Resumos. São Paulo: Sociedade Brasileira de Física.
NLM
Levin AD, Gusev GM, Raichev OE, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric phenomena in 2D e 3D topological insulators. Resumos. 2022 ;[citado 2024 out. 15 ]
Vancouver
Levin AD, Gusev GM, Raichev OE, Olshanetsky EB, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric phenomena in 2D e 3D topological insulators. Resumos. 2022 ;[citado 2024 out. 15 ]
Artigo de periodico
Topological insulators based on HgTe (2020)
Kvon, Z D; Kozlov, D A; Olshanetsky, E B; Gusev, G M ; Mikhailov, N N; Dvoretsky, S A
Source: Physics Uspekhi. Unidade: IF
Assunto: POÇOS QUÂNTICOS
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ABNT
KVON, Z D et al. Topological insulators based on HgTe. Physics Uspekhi, v. 63, n. 7, p. 629-647, 2020Tradução . . Disponível em: https://doi.org/10.3367/UFNe.2019.10.038669. Acesso em: 15 out. 2024.
APA
Kvon, Z. D., Kozlov, D. A., Olshanetsky, E. B., Gusev, G. M., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Topological insulators based on HgTe. Physics Uspekhi, 63( 7), 629-647. doi:10.3367/UFNe.2019.10.038669
NLM
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 out. 15 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Vancouver
Kvon ZD, Kozlov DA, Olshanetsky EB, Gusev GM, Mikhailov NN, Dvoretsky SA. Topological insulators based on HgTe [Internet]. Physics Uspekhi. 2020 ; 63( 7): 629-647.[citado 2024 out. 15 ] Available from: https://doi.org/10.3367/UFNe.2019.10.038669
Artigo de periodico
Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators (2019)
Rahim, Abdur; Gusev, G M ; Kvonc, Z D; Olshanetsky, E B; Mikhailov, N N; Dvoretsky, S A
Source: Microelectronic Engineering. Unidade: IF
Subjects: PROPRIEDADES DOS MATERIAIS, NANOTECNOLOGIA
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ABNT
RAHIM, Abdur et al. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, v. 206, p. 55-59, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2018.12.011. Acesso em: 15 out. 2024.
APA
Rahim, A., Gusev, G. M., Kvonc, Z. D., Olshanetsky, E. B., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators. Microelectronic Engineering, 206, 55-59. doi:10.1016/j.mee.2018.12.011
NLM
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Vancouver
Rahim A, Gusev GM, Kvonc ZD, Olshanetsky EB, Mikhailov NN, Dvoretsky SA. Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators [Internet]. Microelectronic Engineering. 2019 ; 206 55-59.[citado 2024 out. 15 ] Available from: https://doi.org/10.1016/j.mee.2018.12.011
Artigo de periodico
Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well (2019)
Gusev, G M ; Raichev, O E; Olshanetsky, E B; Levin, A D ; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: 2D Materials. Unidade: IF
Subjects: TERMOELETRICIDADE, CONDUTIVIDADE ELÉTRICA, POÇOS QUÂNTICOS
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ABNT
GUSEV, G M et al. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, v. 6, n. 014001, p. 1-21, 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1583/aaf702. Acesso em: 15 out. 2024.
APA
Gusev, G. M., Raichev, O. E., Olshanetsky, E. B., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2019). Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well. 2D Materials, 6( 014001), 1-21. doi:10.1088/2053-1583/aaf702
NLM
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 out. 15 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Vancouver
Gusev GM, Raichev OE, Olshanetsky EB, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Thermoelectric transport in two-dimensional topological insulator state based on HgTe quantum well [Internet]. 2D Materials. 2019 ; 6( 014001): 1-21.[citado 2024 out. 15 ] Available from: https://doi.org/10.1088/2053-1583/aaf702
Artigo de periodico
Robust helical edge transport at 'nü' = 0 quantum Hall state (2017)
Gusev, Guennadii Michailovich; Kozlov, D A; Levin, Alexander D; Kvon, Z D; Mikhailov, N N; Dvoretsky, S A
Source: Physical Review B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
GUSEV, Guennadii Michailovich et al. Robust helical edge transport at 'nü' = 0 quantum Hall state. Physical Review B, v. 96, n. 4, p. 045304/1-045304/5, 2017Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.96.045304. Acesso em: 15 out. 2024.
APA
Gusev, G. M., Kozlov, D. A., Levin, A. D., Kvon, Z. D., Mikhailov, N. N., & Dvoretsky, S. A. (2017). Robust helical edge transport at 'nü' = 0 quantum Hall state. Physical Review B, 96( 4), 045304/1-045304/5. doi:10.1103/PhysRevB.96.045304
NLM
Gusev GM, Kozlov DA, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Robust helical edge transport at 'nü' = 0 quantum Hall state [Internet]. Physical Review B. 2017 ;96( 4): 045304/1-045304/5.[citado 2024 out. 15 ] Available from: https://doi.org/10.1103/PhysRevB.96.045304
Vancouver
Gusev GM, Kozlov DA, Levin AD, Kvon ZD, Mikhailov NN, Dvoretsky SA. Robust helical edge transport at 'nü' = 0 quantum Hall state [Internet]. Physical Review B. 2017 ;96( 4): 045304/1-045304/5.[citado 2024 out. 15 ] Available from: https://doi.org/10.1103/PhysRevB.96.045304

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