Martino, João Antonio 
; Lauwers, L.; Colinge, Jean-Pierre
Source: Anais. Conference titles: Congresso da Sociedade Brasileira de Microeletrônica. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
MARTINO, João Antonio e LAUWERS, L. e COLINGE, Jean-Pierre. An analytical model for the potential drop in the silicon substrate on thin film SOI Mosfet's and its influence on the threshold voltage. 1990, Anais.. Campinas: SBM, 1990. Disponível em: https://doi.org/10.1117/12.26296. Acesso em: 09 out. 2024.APA
Martino, J. A., Lauwers, L., & Colinge, J. -P. (1990). An analytical model for the potential drop in the silicon substrate on thin film SOI Mosfet's and its influence on the threshold voltage. In Anais. Campinas: SBM. doi:10.1117/12.26296NLM
Martino JA, Lauwers L, Colinge J-P. An analytical model for the potential drop in the silicon substrate on thin film SOI Mosfet's and its influence on the threshold voltage [Internet]. Anais. 1990 ;[citado 2024 out. 09 ] Available from: https://doi.org/10.1117/12.26296Vancouver
Martino JA, Lauwers L, Colinge J-P. An analytical model for the potential drop in the silicon substrate on thin film SOI Mosfet's and its influence on the threshold voltage [Internet]. Anais. 1990 ;[citado 2024 out. 09 ] Available from: https://doi.org/10.1117/12.26296
