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Filtros : "MICROELETRÔNICA" "LEITE, JOSE ROBERTO" Removido: "Suiça" Limpar

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  • Artigo de periodico

    The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot (2004)

    Rodríguez Coppola, H; Tutor Sánchez, J; Leite, J. R.; Scolfaro, Luisa Maria Ribeiro; García Moliner, F

    Source: Microelectronics Journal. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES, MICROELETRÔNICA

    Acesso à fonteAcesso à fonteDOIHow to cite
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    • ABNT

      RODRÍGUEZ COPPOLA, H et al. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2003.10.005. Acesso em: 25 set. 2024.

    • APA

      Rodríguez Coppola, H., Tutor Sánchez, J., Leite, J. R., Scolfaro, L. M. R., & García Moliner, F. (2004). The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot. Microelectronics Journal. doi:10.1016/j.mejo.2003.10.005

    • NLM

      Rodríguez Coppola H, Tutor Sánchez J, Leite JR, Scolfaro LMR, García Moliner F. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot [Internet]. Microelectronics Journal. 2004 ;[citado 2024 set. 25 ] Available from: https://doi.org/10.1016/j.mejo.2003.10.005

    • Vancouver

      Rodríguez Coppola H, Tutor Sánchez J, Leite JR, Scolfaro LMR, García Moliner F. The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot [Internet]. Microelectronics Journal. 2004 ;[citado 2024 set. 25 ] Available from: https://doi.org/10.1016/j.mejo.2003.10.005

  • Artigo de periodico

    Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well (2003)

    Sergio, C S; Gusev, Guennadii Michailovich; Quivy, A. A.; Lamas, T E; Leite, J. R.; Estibals, O; Portal, J C

    Source: Microeletronics Journal. Unidade: IF

    Subjects: ESTRUTURA ELETRÔNICA, EFEITO HALL, MICROELETRÔNICA

    PrivadoAcesso à fonteDOIHow to cite
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    • ABNT

      SERGIO, C S et al. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microeletronics Journal, 2003Tradução . . Disponível em: https://doi.org/10.1016/S0026-2692(03)00121-6. Acesso em: 25 set. 2024.

    • APA

      Sergio, C. S., Gusev, G. M., Quivy, A. A., Lamas, T. E., Leite, J. R., Estibals, O., & Portal, J. C. (2003). Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well. Microeletronics Journal. doi:10.1016/S0026-2692(03)00121-6

    • NLM

      Sergio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microeletronics Journal. 2003 ;[citado 2024 set. 25 ] Available from: https://doi.org/10.1016/S0026-2692(03)00121-6

    • Vancouver

      Sergio CS, Gusev GM, Quivy AA, Lamas TE, Leite JR, Estibals O, Portal JC. Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well [Internet]. Microeletronics Journal. 2003 ;[citado 2024 set. 25 ] Available from: https://doi.org/10.1016/S0026-2692(03)00121-6
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