Source: Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Subjects: MICROELETRÔNICA, POLÍMEROS (MATERIAIS)
ABNT
TOQUETTI, Leandro Zeidan et al. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 07 set. 2024.APA
Toquetti, L. Z., Santos Filho, S. G. dos, Diniz, J. A., & Swart, J. W. (2004). Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. In Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. Pennington: The Electrochemical Society.NLM
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 set. 07 ]Vancouver
Toquetti LZ, Santos Filho SG dos, Diniz JA, Swart JW. Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon thermal oxide/silicon structure. Microelectronics technology and devices SBMicro 2004. Proceedings, v. 2004-03. 2004 ;[citado 2024 set. 07 ]