Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape (2009)
Source: Semiconductor Science and Technology. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
BÜHLER, Rudolf Theoderich et al. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, v. 24, n. 11, 2009Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/24/11/115017. Acesso em: 07 set. 2024.APA
Bühler, R. T., Giacomini, R., Pavanello, M. A., & Martino, J. A. (2009). Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape. Semiconductor Science and Technology, 24( 11). doi:10.1088/0268-1242/24/11/115017NLM
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2024 set. 07 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017Vancouver
Bühler RT, Giacomini R, Pavanello MA, Martino JA. Trapezoidal SOI FinFET analog parameters' dependence on cross-section shape [Internet]. Semiconductor Science and Technology. 2009 ; 24( 11):[citado 2024 set. 07 ] Available from: https://doi.org/10.1088/0268-1242/24/11/115017