MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence (1989)
Fonte: Anais. Nome do evento: Escola Brasileira de Física de Semicondutores. Unidade: IFQSC
Assunto: FÍSICA
ABNT
BERNUSSI, A. A. et al. MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. 1989, Anais.. Belo Horizonte: UFMG, 1989. . Acesso em: 24 nov. 2025.APA
Bernussi, A. A., Motisuke, P., Basmaji, P., Ceschin, A. M., Siu Li, M., & Hipólito, O. (1989). MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. In Anais. Belo Horizonte: UFMG.NLM
Bernussi AA, Motisuke P, Basmaji P, Ceschin AM, Siu Li M, Hipólito O. MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. Anais. 1989 ;[citado 2025 nov. 24 ]Vancouver
Bernussi AA, Motisuke P, Basmaji P, Ceschin AM, Siu Li M, Hipólito O. MOVPE growth and characterization of GaAs on Si by photoreflectance and photoluminescence. Anais. 1989 ;[citado 2025 nov. 24 ]
