ReP USP - Resultado da busca

Artigo de periodico
Electronic and magnetic properties of Mn-doped InP nanowires from first principles (2006)
Schmidt, T M; Venezuela, P; Arantes Junior, Jeverson Teodoro; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS, SEMICONDUTORES, FERROMAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCHMIDT, T M et al. Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, v. 73, n. 23, p. 235330, 2006Tradução . . Disponível em: https://doi.org/10.1103/physrevb.73.235330. Acesso em: 04 nov. 2025.
APA
Schmidt, T. M., Venezuela, P., Arantes Junior, J. T., & Fazzio, A. (2006). Electronic and magnetic properties of Mn-doped InP nanowires from first principles. Physical Review B, 73( 23), 235330. doi:10.1103/physrevb.73.235330
NLM
Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.73.235330
Vancouver
Schmidt TM, Venezuela P, Arantes Junior JT, Fazzio A. Electronic and magnetic properties of Mn-doped InP nanowires from first principles [Internet]. Physical Review B. 2006 ; 73( 23): 235330.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.73.235330
Artigo de periodico
Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations (2005)
Schmidt, T M; Miwa, R H; Venezuela, P; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCHMIDT, T M et al. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, v. 72, n. 19, p. 193404/1-193404/4, 2005Tradução . . Acesso em: 04 nov. 2025.
APA
Schmidt, T. M., Miwa, R. H., Venezuela, P., & Fazzio, A. (2005). Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B, 72( 19), 193404/1-193404/4.
NLM
Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2025 nov. 04 ]
Vancouver
Schmidt TM, Miwa RH, Venezuela P, Fazzio A. Stability and electronic confinement of free-standing InP nanowires: Ab initio calculations. Physical Review B. 2005 ; 72( 19): 193404/1-193404/4.[citado 2025 nov. 04 ]
Artigo de periodico
Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)
Miwa, R H; Venezuela, P; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, v. 67, n. 20, p. 205317/1-205317, 2003Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X'. Physical Review B, 67( 20), 205317/1-205317. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
NLM
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
Vancouver
Miwa RH, Venezuela P, Fazzio A. Theoretical investigation of extended defects and their interactions with vacancies in 'Si IND.X' 'Ge IND.1-X' [Internet]. Physical Review B. 2003 ; 67( 20): 205317/1-205317.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000067000020205317000001&idtype=cvips
Trabalho de evento-resumo
Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X' (2003)
Miwa, R H; Venezuela, P; Fazzio, Adalberto
Source: Book of Abstracts. Conference titles: Brazilian Workshop on Semiconductor Physics. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MIWA, R H e VENEZUELA, P e FAZZIO, Adalberto. Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. 2003, Anais.. Fortaleza: DF/UFC, 2003. . Acesso em: 04 nov. 2025.
APA
Miwa, R. H., Venezuela, P., & Fazzio, A. (2003). Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. In Book of Abstracts. Fortaleza: DF/UFC.
NLM
Miwa RH, Venezuela P, Fazzio A. Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Vancouver
Miwa RH, Venezuela P, Fazzio A. Stacking faults and vacancies in 'Si IND.X' 'Ge IND.1-X'. Book of Abstracts. 2003 ;[citado 2025 nov. 04 ]
Artigo de periodico
Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy (2001)
Venezuela, P; Dalpian, Gustavo Martini ; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Physical Review B. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, ESTRUTURA DOS SÓLIDOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VENEZUELA, P et al. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy. Physical Review B, v. 64, n. 19, p. 3202/1-3202/4, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips. Acesso em: 04 nov. 2025.
APA
Venezuela, P., Dalpian, G. M., Silva, A. J. R. da, & Fazzio, A. (2001). Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy. Physical Review B, 64( 19), 3202/1-3202/4. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips
NLM
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy [Internet]. Physical Review B. 2001 ; 64( 19): 3202/1-3202/4.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips
Vancouver
Venezuela P, Dalpian GM, Silva AJR da, Fazzio A. Ab initio determination of the atomistic structure of 'Si IND.X' 'Ge IND.1-X' alloy [Internet]. Physical Review B. 2001 ; 64( 19): 3202/1-3202/4.[citado 2025 nov. 04 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRBMDO000064000019193202000001&idtype=cvips

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