Fonte: Physical Review B. Unidade: IF
Assuntos: MATÉRIA CONDENSADA, POÇOS QUÂNTICOS, ESTRUTURA ELETRÔNICA
ABNT
MARTINI, S et al. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, v. 72, n. 15, p. 153304/01-153304/04, 2005Tradução . . Disponível em: https://doi.org/10.1103/physrevb.72.153304. Acesso em: 04 nov. 2025.APA
Martini, S., Quivy, A. A., Lamas, T. E., & Silva, E. C. F. da. (2005). Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates. Physical Review B, 72( 15), 153304/01-153304/04. doi:10.1103/physrevb.72.153304NLM
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.72.153304Vancouver
Martini S, Quivy AA, Lamas TE, Silva ECF da. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs (001) substrates [Internet]. Physical Review B. 2005 ; 72( 15): 153304/01-153304/04.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1103/physrevb.72.153304