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Filtros : "IF" "IFSC222" "2002" Removidos: "BAPTISTA, MAURICIO DA SILVA" "Effenberger, Fernando Bacci" "2003" "Missell, Frank Patrick" "FAU-AUP" Limpar

Filtros

Artigo de periodico
Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures (2002)
Rodrigues, S. C. P.; Sipahi, Guilherme Matos; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Journal of Physics-Condensed Matter. Unidades: IFSC, IF
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S. C. P. et al. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, v. 14, n. 23, p. 5813-5827, 2002Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/14/23/312. Acesso em: 12 jul. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (2002). Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures. Journal of Physics-Condensed Matter, 14( 23), 5813-5827. doi:10.1088/0953-8984/14/23/312
NLM
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312
Vancouver
Rodrigues SCP, Sipahi GM, Scolfaro LMR, Leite JR. Hole charge localization and band structures of p-doped GaN/InGaN and GaAs/InGaAs semiconductor heterostructures [Internet]. Journal of Physics-Condensed Matter. 2002 ; 14( 23): 5813-5827.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1088/0953-8984/14/23/312
Trabalho de evento-anais periodico
Photoluminescence and photoreflectance vharacterization of cubic GaN/AlxGa1-xN quantum wells (2002)
Noriega, O. C.; Leite, J. R.; Meneses, E. A.; Soares, J. A. N. T.; Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Sipahi, Guilherme Matos; Köhler, U.; As, D. J.; Potthast, S.; Khartchenko, A.; Lischka, K.
Source: Physica Status Solidi C. Conference titles: International Workshop on Nitride Semiconductors - IWM. Unidades: IF, IFSC
Subjects: POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NORIEGA, O. C. et al. Photoluminescence and photoreflectance vharacterization of cubic GaN/AlxGa1-xN quantum wells. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag. Disponível em: https://doi.org/10.1002/pssc.200390105. Acesso em: 12 jul. 2024. , 2002
APA
Noriega, O. C., Leite, J. R., Meneses, E. A., Soares, J. A. N. T., Rodrigues, S. C. P., Scolfaro, L. M. R., et al. (2002). Photoluminescence and photoreflectance vharacterization of cubic GaN/AlxGa1-xN quantum wells. Physica Status Solidi C. Weinheim: Wiley-VCH Verlag. doi:10.1002/pssc.200390105
NLM
Noriega OC, Leite JR, Meneses EA, Soares JANT, Rodrigues SCP, Scolfaro LMR, Sipahi GM, Köhler U, As DJ, Potthast S, Khartchenko A, Lischka K. Photoluminescence and photoreflectance vharacterization of cubic GaN/AlxGa1-xN quantum wells [Internet]. Physica Status Solidi C. 2002 ; 0( 1): 528-531.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1002/pssc.200390105
Vancouver
Noriega OC, Leite JR, Meneses EA, Soares JANT, Rodrigues SCP, Scolfaro LMR, Sipahi GM, Köhler U, As DJ, Potthast S, Khartchenko A, Lischka K. Photoluminescence and photoreflectance vharacterization of cubic GaN/AlxGa1-xN quantum wells [Internet]. Physica Status Solidi C. 2002 ; 0( 1): 528-531.[citado 2024 jul. 12 ] Available from: https://doi.org/10.1002/pssc.200390105

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