Source: Sensors and Actuators A: Physical. Unidade: IF
Assunto: FOTODETECTORES
ABNT
ALZEIDAN, Ahmad et al. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, v. 374, 2024Tradução . . Acesso em: 07 set. 2024.APA
Alzeidan, A., Cantalice, T. F. de, Sautter, K. E., Vallejo, K. D., Simmonds, P. J., & Quivy, A. A. (2024). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, 374. doi:10.1016/j.sna.2024.115464NLM
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical. 2024 ; 374[citado 2024 set. 07 ]Vancouver
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical. 2024 ; 374[citado 2024 set. 07 ]