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Filtros : "IF" "SEMICONDUTORES" "JOURNAL OF APPLIED PHYSICS" Removidos: "Watanabe, S." "Livro de Resumos" "1997" "MAKIUCHI, NILO" "1955" "Encontro da Sociedade Brasileira de Crescimento de Cristais" Limpar

Filtros

Artigo de periodico
Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates (2016)
Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo; Morelhao, Sergio Luiz
Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Subjects: SEMICONDUTORES, RAIOS X
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FORNARI, Celso I. et al. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates. JOURNAL OF APPLIED PHYSICS, v. 119, n. 16, p. 165303, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4947266. Acesso em: 26 jun. 2024.
APA
Fornari, C. I., Rappl, P. H. O., Abramof, E., & Morelhao, S. L. (2016). Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates. JOURNAL OF APPLIED PHYSICS, 119( 16), 165303. doi:10.1063/1.4947266
NLM
Fornari CI, Rappl PHO, Abramof E, Morelhao SL. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates [Internet]. JOURNAL OF APPLIED PHYSICS. 2016 ; 119( 16): 165303.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1063/1.4947266
Vancouver
Fornari CI, Rappl PHO, Abramof E, Morelhao SL. Structural properties of 'BI' IND. 2''TE' IND. 3' topological insulator thin films grown by molecular beam epitaxy on (111) 'BA''F' IND. 2' substrates [Internet]. JOURNAL OF APPLIED PHYSICS. 2016 ; 119( 16): 165303.[citado 2024 jun. 26 ] Available from: https://doi.org/10.1063/1.4947266
Artigo de periodico
All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces (2013)
Silva Filho, O. P.; Ribeiro, M., Jr.; Pela, R. R.; Teles, L. K.; Marques, M.; Ferreira, Luiz Guimarães
Source: JOURNAL OF APPLIED PHYSICS. Unidade: IF
Subjects: ESPECTROMETRIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA FILHO, O. P. et al. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces. JOURNAL OF APPLIED PHYSICS, v. 114, n. 3, p. 033709 , 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4812493. Acesso em: 26 jun. 2024.
APA
Silva Filho, O. P., Ribeiro, M., Pela, R. R., Teles, L. K., Marques, M., & Ferreira, L. G. (2013). All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces. JOURNAL OF APPLIED PHYSICS, 114( 3), 033709 . doi:10.1063/1.4812493
NLM
Silva Filho OP, Ribeiro M, Pela RR, Teles LK, Marques M, Ferreira LG. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 3): 033709 .[citado 2024 jun. 26 ] Available from: https://doi.org/10.1063/1.4812493
Vancouver
Silva Filho OP, Ribeiro M, Pela RR, Teles LK, Marques M, Ferreira LG. All-out band structure and band offset ab initio predictions for AlN/GaN and AlP/GaP interfaces [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 3): 033709 .[citado 2024 jun. 26 ] Available from: https://doi.org/10.1063/1.4812493

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