Source: Microeletronics Journal. Unidade: IF
Subjects: SEMICONDUTORES, DIFRAÇÃO POR RAIOS X, MUDANÇA DE FASE
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LEITE, J. R. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures. Microeletronics Journal, v. 33, n. 4, p. 323-329, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(01)00126-4. Acesso em: 12 set. 2024.APA
Leite, J. R. (2002). Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures. Microeletronics Journal, 33( 4), 323-329. doi:10.1016/s0026-2692(01)00126-4NLM
Leite JR. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures [Internet]. Microeletronics Journal. 2002 ; 33( 4): 323-329.[citado 2024 set. 12 ] Available from: https://doi.org/10.1016/s0026-2692(01)00126-4Vancouver
Leite JR. Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures [Internet]. Microeletronics Journal. 2002 ; 33( 4): 323-329.[citado 2024 set. 12 ] Available from: https://doi.org/10.1016/s0026-2692(01)00126-4
