Study of MOS capacitors with annealed TiO2 gate dielectric layer (2007)
Source: SBMicro 2007. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ALBERTIN, Katia Franklin e VALLE, Marcio A e PEREYRA, Inés. Study of MOS capacitors with annealed TiO2 gate dielectric layer. 2007, Anais.. Pennington: The Electrochemical Society, 2007. Disponível em: https://doi.org/10.1149/1.2766918. Acesso em: 11 out. 2024.APA
Albertin, K. F., Valle, M. A., & Pereyra, I. (2007). Study of MOS capacitors with annealed TiO2 gate dielectric layer. In SBMicro 2007. Pennington: The Electrochemical Society. doi:10.1149/1.2766918NLM
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitors with annealed TiO2 gate dielectric layer [Internet]. SBMicro 2007. 2007 ;[citado 2024 out. 11 ] Available from: https://doi.org/10.1149/1.2766918Vancouver
Albertin KF, Valle MA, Pereyra I. Study of MOS capacitors with annealed TiO2 gate dielectric layer [Internet]. SBMicro 2007. 2007 ;[citado 2024 out. 11 ] Available from: https://doi.org/10.1149/1.2766918