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Trabalho de evento-anais periodico
InAs quantum dots over InGaAs for infrared photodetectors (2004)
Pires, M. P.; Landi, S. M.; Tribuzy, C. V. B.; Nunes, Luiz Antônio de Oliveira ; Marega Junior, Euclydes ; Souza, P. L.
Source: Journal of Crystal Growth. Conference titles: International Conference on Metalorganic Vapor Phase Epitaxy. Unidade: IFSC
Assunto: SEMICONDUTORES
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ABNT
PIRES, M. P. et al. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science. . Acesso em: 02 nov. 2024. , 2004
APA
Pires, M. P., Landi, S. M., Tribuzy, C. V. B., Nunes, L. A. de O., Marega Junior, E., & Souza, P. L. (2004). InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. Amsterdam: Elsevier Science.
NLM
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Junior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 nov. 02 ]
Vancouver
Pires MP, Landi SM, Tribuzy CVB, Nunes LA de O, Marega Junior E, Souza PL. InAs quantum dots over InGaAs for infrared photodetectors. Journal of Crystal Growth. 2004 ; 272 192-197.[citado 2024 nov. 02 ]
Artigo de periodico
Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample (2002)
Silva, M J; Quivy, Alain Andre; González-Borrero, Pedro Pablo; Marega Junior, Euclydes
Source: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
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ABNT
SILVA, M J et al. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, v. 236, n. 1-3, p. 41-45, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(01)02109-1. Acesso em: 02 nov. 2024.
APA
Silva, M. J., Quivy, A. A., González-Borrero, P. P., & Marega Junior, E. (2002). Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample. Journal of Crystal Growth, 236( 1-3), 41-45. doi:10.1016/s0022-0248(01)02109-1
NLM
Silva MJ, Quivy AA, González-Borrero PP, Marega Junior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
Vancouver
Silva MJ, Quivy AA, González-Borrero PP, Marega Junior E. Maximization of the InAs quantum-dot density through the growth of an intentionally non-homogeneous sample [Internet]. Journal of Crystal Growth. 2002 ;236( 1-3): 41-45.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0022-0248(01)02109-1
Artigo de periodico
Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle (2002)
Silva, M. J. da; Quivy, Alain Andre; González-Borrero, P. P.; Marega Junior, Euclydes ; Leite, J. R.
Source: Journal of Crystal Growth. Unidades: IF, IFSC
Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, M. J. da et al. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle. Journal of Crystal Growth, v. 241, n. 1-2, p. 19-30, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(02)00947-8. Acesso em: 02 nov. 2024.
APA
Silva, M. J. da, Quivy, A. A., González-Borrero, P. P., Marega Junior, E., & Leite, J. R. (2002). Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle. Journal of Crystal Growth, 241( 1-2), 19-30. doi:10.1016/s0022-0248(02)00947-8
NLM
Silva MJ da, Quivy AA, González-Borrero PP, Marega Junior E, Leite JR. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle [Internet]. Journal of Crystal Growth. 2002 ;241( 1-2): 19-30.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0022-0248(02)00947-8
Vancouver
Silva MJ da, Quivy AA, González-Borrero PP, Marega Junior E, Leite JR. Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle [Internet]. Journal of Crystal Growth. 2002 ;241( 1-2): 19-30.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0022-0248(02)00947-8
Trabalho de evento-anais periodico
Correlation between structural and optical properties of InAs quantum dots along their evolution (2001)
Silva, Marcelo Jacob da; Quivy, A. A.; González-Borrero, P P; Moshegov, N T; Marega Junior, Euclydes
Source: Journal of Crystal Growth. Conference titles: International Conference on Molecular Beam Epitaxy. Unidades: IF, IFSC
Assunto: DIELÉTRICOS
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ABNT
SILVA, Marcelo Jacob da et al. Correlation between structural and optical properties of InAs quantum dots along their evolution. Journal of Crystal Growth. Amsterdam: Instituto de Física, Universidade de São Paulo. Disponível em: https://doi.org/10.1016/S0022-0248(01)00981-2. Acesso em: 02 nov. 2024. , 2001
APA
Silva, M. J. da, Quivy, A. A., González-Borrero, P. P., Moshegov, N. T., & Marega Junior, E. (2001). Correlation between structural and optical properties of InAs quantum dots along their evolution. Journal of Crystal Growth. Amsterdam: Instituto de Física, Universidade de São Paulo. doi:10.1016/S0022-0248(01)00981-2
NLM
Silva MJ da, Quivy AA, González-Borrero PP, Moshegov NT, Marega Junior E. Correlation between structural and optical properties of InAs quantum dots along their evolution [Internet]. Journal of Crystal Growth. 2001 ;227-228 1025-1028.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/S0022-0248(01)00981-2
Vancouver
Silva MJ da, Quivy AA, González-Borrero PP, Moshegov NT, Marega Junior E. Correlation between structural and optical properties of InAs quantum dots along their evolution [Internet]. Journal of Crystal Growth. 2001 ;227-228 1025-1028.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/S0022-0248(01)00981-2
Artigo de periodico
Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs (1997)
Gonzalez-Borrero, Pedro P; Marega Junior, Euclydes ; Lubyshev, D I; Petitprez, E; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
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ABNT
GONZALEZ-BORRERO, Pedro P et al. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs. Journal of Crystal Growth, v. 175-176, p. 765-770, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0022-0248(96)01182-7. Acesso em: 02 nov. 2024.
APA
Gonzalez-Borrero, P. P., Marega Junior, E., Lubyshev, D. I., Petitprez, E., & Basmaji, P. (1997). Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs. Journal of Crystal Growth, 175-176, 765-770. doi:10.1016/s0022-0248(96)01182-7
NLM
Gonzalez-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs [Internet]. Journal of Crystal Growth. 1997 ; 175-176 765-770.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0022-0248(96)01182-7
Vancouver
Gonzalez-Borrero PP, Marega Junior E, Lubyshev DI, Petitprez E, Basmaji P. Molecular-beam expitaxy of self-assembled InAs quantum dots on non-(1 0 0) oriented GaAs [Internet]. Journal of Crystal Growth. 1997 ; 175-176 765-770.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1016/s0022-0248(96)01182-7
Artigo de periodico
Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS' (1996)
González-Borrero, P P; Lubyshev, D I; Marega Junior, Euclydes ; Petitprez, E; Basmaji, Pierre
Source: Journal of Crystal Growth. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, CIRCUITOS ELETRÔNICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GONZÁLEZ-BORRERO, P P et al. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, v. 169, p. 424-8, 1996Tradução . . Acesso em: 02 nov. 2024.
APA
González-Borrero, P. P., Lubyshev, D. I., Marega Junior, E., Petitprez, E., & Basmaji, P. (1996). Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth, 169, 424-8.
NLM
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2024 nov. 02 ]
Vancouver
González-Borrero PP, Lubyshev DI, Marega Junior E, Petitprez E, Basmaji P. Self-organized 'IN''GA''AS' quantum dots grown by molecular beam epitaxy on (100), (711)a / b, (511)a / b, (311)a / b, (211)a / b, and (111)a / b oriented 'GA''AS'. Journal of Crystal Growth. 1996 ;169 424-8.[citado 2024 nov. 02 ]

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