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Artigo de periodico
Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures (2011)
Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), FILMES FINOS, POÇOS QUÂNTICOS, ÁTOMOS (COMPORTAMENTO ESTRUTURAL)
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ABNT
MAZUR, Yu. I. et al. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures. Applied Physics Letters, v. 98, n. 8, p. 083118-1-083118-3, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3560063. Acesso em: 02 nov. 2024.
APA
Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., Zhuchenko, Z. Y., Tarasov, G. G., et al. (2011). Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures. Applied Physics Letters, 98( 8), 083118-1-083118-3. doi:10.1063/1.3560063
NLM
Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures [Internet]. Applied Physics Letters. 2011 ; 98( 8): 083118-1-083118-3.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.3560063
Vancouver
Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Excited state coherent resonant electronic tunneling in quantum well-quantum dot hybrid structures [Internet]. Applied Physics Letters. 2011 ; 98( 8): 083118-1-083118-3.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.3560063
Artigo de periodico
Atomic scale characterization of Mn doped InAs/GaAs quantum dots (2010)
Bozkurt, M.; Grant, V. A.; Ulloa, J. M.; Campion, R. P.; Foxon, C. T.; Marega Junior, Euclydes ; Salamo, G. J.; Koenraad, P. M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), FILMES FINOS, POÇOS QUÂNTICOS, ÁTOMOS (COMPORTAMENTO ESTRUTURAL)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BOZKURT, M. et al. Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Applied Physics Letters, v. 96, n. Ja 2010, p. 042108-1-042108-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3293296. Acesso em: 02 nov. 2024.
APA
Bozkurt, M., Grant, V. A., Ulloa, J. M., Campion, R. P., Foxon, C. T., Marega Junior, E., et al. (2010). Atomic scale characterization of Mn doped InAs/GaAs quantum dots. Applied Physics Letters, 96( Ja 2010), 042108-1-042108-3. doi:10.1063/1.3293296
NLM
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega Junior E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots [Internet]. Applied Physics Letters. 2010 ; 96( Ja 2010): 042108-1-042108-3.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.3293296
Vancouver
Bozkurt M, Grant VA, Ulloa JM, Campion RP, Foxon CT, Marega Junior E, Salamo GJ, Koenraad PM. Atomic scale characterization of Mn doped InAs/GaAs quantum dots [Internet]. Applied Physics Letters. 2010 ; 96( Ja 2010): 042108-1-042108-3.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.3293296
Artigo de periodico
Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings (2007)
Hanke, Michael; Mazur, Yu I.; Marega Junior, Euclydes ; AbuWaar, Z. Y.; Salamo, G. J.; Schäfer, P.; Schmidbauer, M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, ÓPTICA, MODELOS (TRANSFORMAÇÃO), DIFRAÇÃO POR RAIOS X, MAGNETISMO
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ABNT
HANKE, Michael et al. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, v. 91, p. 043103-1-043103-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2760191. Acesso em: 02 nov. 2024.
APA
Hanke, M., Mazur, Y. I., Marega Junior, E., AbuWaar, Z. Y., Salamo, G. J., Schäfer, P., & Schmidbauer, M. (2007). Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, 91, 043103-1-043103-3. doi:10.1063/1.2760191
NLM
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.2760191
Vancouver
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.2760191
Artigo de periodico
Spin splitting of the electron ground states of InAs quantum dots (2002)
Medeiros-Ribeiro, G.; Pinheiro, M. V. B.; Pimentel, V. L.; Marega Junior, Euclydes
Source: Applied Physics Letters. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
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ABNT
MEDEIROS-RIBEIRO, G. et al. Spin splitting of the electron ground states of InAs quantum dots. Applied Physics Letters, v. 80, n. Ju 2002, p. 4229-4231, 2002Tradução . . Disponível em: https://doi.org/10.1063/1.1483112. Acesso em: 02 nov. 2024.
APA
Medeiros-Ribeiro, G., Pinheiro, M. V. B., Pimentel, V. L., & Marega Junior, E. (2002). Spin splitting of the electron ground states of InAs quantum dots. Applied Physics Letters, 80( Ju 2002), 4229-4231. doi:10.1063/1.1483112
NLM
Medeiros-Ribeiro G, Pinheiro MVB, Pimentel VL, Marega Junior E. Spin splitting of the electron ground states of InAs quantum dots [Internet]. Applied Physics Letters. 2002 ;80( Ju 2002): 4229-4231.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1483112
Vancouver
Medeiros-Ribeiro G, Pinheiro MVB, Pimentel VL, Marega Junior E. Spin splitting of the electron ground states of InAs quantum dots [Internet]. Applied Physics Letters. 2002 ;80( Ju 2002): 4229-4231.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.1483112
Artigo de periodico
Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots (1996)
Lubyshev, D I; González-Borrero, P P; Marega Junior, Euclydes ; Petitprez, E; La Scala Junior, N; Basmaji, Pierre
Source: Applied Physics Letters. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LUBYSHEV, D I et al. Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots. Applied Physics Letters, v. 68, n. ja 1996, p. 205-7, 1996Tradução . . Disponível em: https://doi.org/10.1063/1.116461. Acesso em: 02 nov. 2024.
APA
Lubyshev, D. I., González-Borrero, P. P., Marega Junior, E., Petitprez, E., La Scala Junior, N., & Basmaji, P. (1996). Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots. Applied Physics Letters, 68( ja 1996), 205-7. doi:10.1063/1.116461
NLM
Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots [Internet]. Applied Physics Letters. 1996 ;68( ja 1996): 205-7.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.116461
Vancouver
Lubyshev DI, González-Borrero PP, Marega Junior E, Petitprez E, La Scala Junior N, Basmaji P. Exciton localization and temperature stability in self-organized 'IN''AS' quantum dots [Internet]. Applied Physics Letters. 1996 ;68( ja 1996): 205-7.[citado 2024 nov. 02 ] Available from: https://doi.org/10.1063/1.116461

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