Fonte: Materials Science in Semiconductor Processing. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, PROPRIEDADES DOS MATERIAIS
ABNT
BRAGA, Osvaldo de Melo et al. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent. Materials Science in Semiconductor Processing, v. 154, p. 107200-1-107200-7, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.mssp.2022.107200. Acesso em: 23 ago. 2024.APA
Braga, O. de M., Delfino, C. A., Kawabata, R. M. S., Pinto, L. D., Vieira, G. S., Pires, M. P., et al. (2023). Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent. Materials Science in Semiconductor Processing, 154, 107200-1-107200-7. doi:10.1016/j.mssp.2022.107200NLM
Braga O de M, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Júnior E, Carlin JA, Krishna S. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent [Internet]. Materials Science in Semiconductor Processing. 2023 ; 154 107200-1-107200-7.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1016/j.mssp.2022.107200Vancouver
Braga O de M, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Júnior E, Carlin JA, Krishna S. Investigation of InGaAs/InP photodiode surface passivation using epitaxial regrowth of InP via photoluminescence and photocurrent [Internet]. Materials Science in Semiconductor Processing. 2023 ; 154 107200-1-107200-7.[citado 2024 ago. 23 ] Available from: https://doi.org/10.1016/j.mssp.2022.107200