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Filtros : "IF-FMT" "ICMC" Removido: "LANGE, ROBERT STIK" Limpar

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  • Artigo de periodico

    Learning from machine learning: the case of band-gap directness in semiconductors (2024)

    Ogoshi, Elton ; Popolin Neto, Mário ; Acosta, Carlos Mera; Nascimento, Gabriel de Miranda ; Rodrigues, João Nuno Barbosa; Oliveira Junior, Osvaldo Novais de ; Paulovich, Fernando Vieira ; Dalpian, Gustavo Martini

    Source: Discover Materials. Unidades: IFSC, IF, ICMC

    Subjects: BIG DATA, INTERNET DAS COISAS, APRENDIZADO COMPUTACIONAL

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      OGOSHI, Elton et al. Learning from machine learning: the case of band-gap directness in semiconductors. Discover Materials, v. 4, p. 6-1-6-14, 2024Tradução . . Disponível em: https://doi.org/10.1007/s43939-024-00073-x. Acesso em: 07 set. 2024.

    • APA

      Ogoshi, E., Popolin Neto, M., Acosta, C. M., Nascimento, G. de M., Rodrigues, J. N. B., Oliveira Junior, O. N. de, et al. (2024). Learning from machine learning: the case of band-gap directness in semiconductors. Discover Materials, 4, 6-1-6-14. doi:10.1007/s43939-024-00073-x

    • NLM

      Ogoshi E, Popolin Neto M, Acosta CM, Nascimento G de M, Rodrigues JNB, Oliveira Junior ON de, Paulovich FV, Dalpian GM. Learning from machine learning: the case of band-gap directness in semiconductors [Internet]. Discover Materials. 2024 ; 4 6-1-6-14.[citado 2024 set. 07 ] Available from: https://doi.org/10.1007/s43939-024-00073-x

    • Vancouver

      Ogoshi E, Popolin Neto M, Acosta CM, Nascimento G de M, Rodrigues JNB, Oliveira Junior ON de, Paulovich FV, Dalpian GM. Learning from machine learning: the case of band-gap directness in semiconductors [Internet]. Discover Materials. 2024 ; 4 6-1-6-14.[citado 2024 set. 07 ] Available from: https://doi.org/10.1007/s43939-024-00073-x

  • Artigo de periodico

    In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots (2019)

    Cantalice, Tiago Fernandes de ; Alzeidan, Ahmad; Urahata, Sergio Minoru; Quivy, Alain André

    Source: Materials Research Express. Unidades: IF, ICMC

    Assunto: ELÉTRONS

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      CANTALICE, Tiago Fernandes de et al. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots. Materials Research Express, v. 6 p. 126205(6), 2019Tradução . . Disponível em: https://doi.org/10.1088/2053-1591/ab55a8. Acesso em: 07 set. 2024.

    • APA

      Cantalice, T. F. de, Alzeidan, A., Urahata, S. M., & Quivy, A. A. (2019). In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots. Materials Research Express, 6 p. 126205(6). doi:10.1088/2053-1591/ab55a8

    • NLM

      Cantalice TF de, Alzeidan A, Urahata SM, Quivy AA. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots [Internet]. Materials Research Express. 2019 ;6 p. 126205(6)[citado 2024 set. 07 ] Available from: https://doi.org/10.1088/2053-1591/ab55a8

    • Vancouver

      Cantalice TF de, Alzeidan A, Urahata SM, Quivy AA. In-situ measurement of indium segregation in InAs/GaAs submonolayer quantum dots [Internet]. Materials Research Express. 2019 ;6 p. 126205(6)[citado 2024 set. 07 ] Available from: https://doi.org/10.1088/2053-1591/ab55a8
  • 1

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