Deposition of silicon nitride films by LPCVD assisted by high density plasma (1998)
Source: IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. Conference titles: International Vacuum Congress. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues e FURLAN, Rogério. Deposition of silicon nitride films by LPCVD assisted by high density plasma. 1998, Anais.. Birmingham: Institute of Physics, 1998. . Acesso em: 26 ago. 2024.APA
Zambom, L. da S., Mansano, R. D., & Furlan, R. (1998). Deposition of silicon nitride films by LPCVD assisted by high density plasma. In IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. Birmingham: Institute of Physics.NLM
Zambom L da S, Mansano RD, Furlan R. Deposition of silicon nitride films by LPCVD assisted by high density plasma. IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. 1998 ;[citado 2024 ago. 26 ]Vancouver
Zambom L da S, Mansano RD, Furlan R. Deposition of silicon nitride films by LPCVD assisted by high density plasma. IVC-14, ICSS-10, NANO-5, QSA-10: abstract book. 1998 ;[citado 2024 ago. 26 ]