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Artigo de periodico
a-Si:H thin films deposited at low temperature by sputtering (2010)
Nunes, Carolina Carvalho Previdi; Zambom, Luís da Silva ; Mansano, Ronaldo Domingues
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NUNES, Carolina Carvalho Previdi e ZAMBOM, Luís da Silva e MANSANO, Ronaldo Domingues. a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 135-142, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474151. Acesso em: 03 out. 2024.
APA
Nunes, C. C. P., Zambom, L. da S., & Mansano, R. D. (2010). a-Si:H thin films deposited at low temperature by sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 135-142. doi:10.1149/1.3474151
NLM
Nunes CCP, Zambom L da S, Mansano RD. a-Si:H thin films deposited at low temperature by sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 135-142.[citado 2024 out. 03 ] Available from: https://doi.org/10.1149/1.3474151
Vancouver
Nunes CCP, Zambom L da S, Mansano RD. a-Si:H thin films deposited at low temperature by sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 135-142.[citado 2024 out. 03 ] Available from: https://doi.org/10.1149/1.3474151
Artigo de periodico
Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering (2010)
Damiani, Larissa Rodrigues; Mansano, Ronaldo Domingues
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DAMIANI, Larissa Rodrigues e MANSANO, Ronaldo Domingues. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 117-124, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474149. Acesso em: 03 out. 2024.
APA
Damiani, L. R., & Mansano, R. D. (2010). Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 117-124. doi:10.1149/1.3474149
NLM
Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.[citado 2024 out. 03 ] Available from: https://doi.org/10.1149/1.3474149
Vancouver
Damiani LR, Mansano RD. Thickness dependence of indium-tin oxide thin films deposited by RF magnetron sputtering [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 117-124.[citado 2024 out. 03 ] Available from: https://doi.org/10.1149/1.3474149
Artigo de periodico
Characterization of InN thin films grown by IBAD method (2010)
Sparvoli, Marina; Chubaci, José Fernando Diniz ; Mansano, Ronaldo Domingues
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidades: EP, IF
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SPARVOLI, Marina e CHUBACI, José Fernando Diniz e MANSANO, Ronaldo Domingues. Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 165-170, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474155. Acesso em: 03 out. 2024.
APA
Sparvoli, M., Chubaci, J. F. D., & Mansano, R. D. (2010). Characterization of InN thin films grown by IBAD method. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 165-170. doi:10.1149/1.3474155
NLM
Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.[citado 2024 out. 03 ] Available from: https://doi.org/10.1149/1.3474155
Vancouver
Sparvoli M, Chubaci JFD, Mansano RD. Characterization of InN thin films grown by IBAD method [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 165-170.[citado 2024 out. 03 ] Available from: https://doi.org/10.1149/1.3474155

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