Study of indium nitride and indium oxynitride band gaps (2013)
Source: MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS. Unidades: EP, IF
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
ABNT
SPARVOLI, Marina e MANSANO, Ronaldo Domingues e CHUBACI, José Fernando Diniz. Study of indium nitride and indium oxynitride band gaps. MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, v. 16, n. 4, p. 850-852, 2013Tradução . . Disponível em: https://doi.org/10.1590/S1516-14392013005000063. Acesso em: 26 ago. 2024.APA
Sparvoli, M., Mansano, R. D., & Chubaci, J. F. D. (2013). Study of indium nitride and indium oxynitride band gaps. MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS, 16( 4), 850-852. doi:10.1590/S1516-14392013005000063NLM
Sparvoli M, Mansano RD, Chubaci JFD. Study of indium nitride and indium oxynitride band gaps [Internet]. MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS. 2013 ; 16( 4): 850-852.[citado 2024 ago. 26 ] Available from: https://doi.org/10.1590/S1516-14392013005000063Vancouver
Sparvoli M, Mansano RD, Chubaci JFD. Study of indium nitride and indium oxynitride band gaps [Internet]. MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS. 2013 ; 16( 4): 850-852.[citado 2024 ago. 26 ] Available from: https://doi.org/10.1590/S1516-14392013005000063