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Trabalho de evento
Isotropic etching of deep trenches in silicon (1996)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, H. S.
Source: Proceedings. Conference titles: Conference on the Brazilian Microelectronics Society. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Isotropic etching of deep trenches in silicon. 1996, Anais.. São Paulo: Sbmicro, 1996. . Acesso em: 05 nov. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Isotropic etching of deep trenches in silicon. In Proceedings. São Paulo: Sbmicro.
NLM
Mansano RD, Verdonck PB, Maciel HS. Isotropic etching of deep trenches in silicon. Proceedings. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Isotropic etching of deep trenches in silicon. Proceedings. 1996 ;[citado 2024 nov. 05 ]
Artigo de periodico
Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures (1996)
Verdonck, Patrick Bernard; Hasenack, Claus Martin; Mansano, Ronaldo Domingues
Source: Journal of Vacuum Science and Technology B. Unidade: EP
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VERDONCK, Patrick Bernard e HASENACK, Claus Martin e MANSANO, Ronaldo Domingues. Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures. Journal of Vacuum Science and Technology B, v. 14, n. 1 , p. 538-42, 1996Tradução . . Disponível em: https://doi.org/10.1116/1.588426. Acesso em: 05 nov. 2024.
APA
Verdonck, P. B., Hasenack, C. M., & Mansano, R. D. (1996). Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures. Journal of Vacuum Science and Technology B, 14( 1 ), 538-42. doi:10.1116/1.588426
NLM
Verdonck PB, Hasenack CM, Mansano RD. Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures [Internet]. Journal of Vacuum Science and Technology B. 1996 ;14( 1 ): 538-42.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1116/1.588426
Vancouver
Verdonck PB, Hasenack CM, Mansano RD. Metal contamination of silicon wafers induced by reactive ion etching plasmas and its behavior upon subsequent cleaning procedures [Internet]. Journal of Vacuum Science and Technology B. 1996 ;14( 1 ): 538-42.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1116/1.588426
Artigo de periodico
Deep trench etching in silicon with fluorine containing plasmas (1996)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, H. S.
Source: Applied Surface Science. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, v. 100-1, p. 583-6, 1996Tradução . . Disponível em: https://doi.org/10.1016/0169-4332(96)00343-1. Acesso em: 05 nov. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, 100-1, 583-6. doi:10.1016/0169-4332(96)00343-1
NLM
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ;100-1 583-6.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ;100-1 583-6.[citado 2024 nov. 05 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1
Trabalho de evento-resumo
Mechanisms of surface roughness induced in silicon by fluorine containing plasmas (1996)
Mansano, Ronaldo Domingues ; Verdonck, Patrick Bernard; Maciel, H. S.
Source: Abstracts Book. Conference titles: International Conference on Thin Films. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. 1996, Anais.. Madrid: Escola Politécnica, Universidade de São Paulo, 1996. . Acesso em: 05 nov. 2024.
APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. In Abstracts Book. Madrid: Escola Politécnica, Universidade de São Paulo.
NLM
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Abstracts Book. 1996 ;[citado 2024 nov. 05 ]
Vancouver
Mansano RD, Verdonck PB, Maciel HS. Mechanisms of surface roughness induced in silicon by fluorine containing plasmas. Abstracts Book. 1996 ;[citado 2024 nov. 05 ]

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