Nitrogen antisite defect in zincblende-type boron nitride (1996)
Source: Anais. Conference titles: International Conference on the Physics of Semiconductors. Unidade: IF
Assunto: MATÉRIA CONDENSADA
ABNT
CASTINEIRA, J L P et al. Nitrogen antisite defect in zincblende-type boron nitride. 1996, Anais.. Singapore: World Scientific, 1996. . Acesso em: 10 out. 2024.APA
Castineira, J. L. P., Leite, J. R., Scolfaro, L. M. R., Enderlein, R., Alves, J. L. A., & Kajaj, K. K. (1996). Nitrogen antisite defect in zincblende-type boron nitride. In Anais. Singapore: World Scientific.NLM
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Kajaj KK. Nitrogen antisite defect in zincblende-type boron nitride. Anais. 1996 ;[citado 2024 out. 10 ]Vancouver
Castineira JLP, Leite JR, Scolfaro LMR, Enderlein R, Alves JLA, Kajaj KK. Nitrogen antisite defect in zincblende-type boron nitride. Anais. 1996 ;[citado 2024 out. 10 ]