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Artigo de periodico
Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering (2000)
Lemos, V; Silveira, E; Leite, J. R.; Tabata, A; Trentin, R.; Scolfaro, Luisa Maria Ribeiro; Frey, T; As, D J; Schikora, D; Lischka, K
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
LEMOS, V et al. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, v. 84, n. 16, p. 3666-3669, 2000Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips. Acesso em: 10 out. 2024.
APA
Lemos, V., Silveira, E., Leite, J. R., Tabata, A., Trentin, R., Scolfaro, L. M. R., et al. (2000). Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering. Physical Review Letters, 84( 16), 3666-3669. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
NLM
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 out. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Vancouver
Lemos V, Silveira E, Leite JR, Tabata A, Trentin R, Scolfaro LMR, Frey T, As DJ, Schikora D, Lischka K. Evidence for phase-separated quantum dots in cubic InGaN layers from resonant raman scattering [Internet]. Physical Review Letters. 2000 ; 84( 16): 3666-3669.[citado 2024 out. 10 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=PRLTAO000084000016003666000001&idtype=cvips
Artigo de periodico
Reply to the comment on the paper density functional theory for holes in semiconductors (1998)
Enderlein, R; Sipahi, Guilherme Matos ; Scolfaro, L M R; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ENDERLEIN, R et al. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 10 out. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, 80( 14), 3160.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 out. 10 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 out. 10 ]
Artigo de periodico
Density functional theory for holes in semiconductors - replay (1998)
Enderlein, R; Sipahi, Guilherme Matos ; Scolfaro, L M R; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ENDERLEIN, R et al. Density functional theory for holes in semiconductors - replay. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 10 out. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Density functional theory for holes in semiconductors - replay. Physical Review Letters, 80( 14), 3160.
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density functional theory for holes in semiconductors - replay. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 out. 10 ]
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density functional theory for holes in semiconductors - replay. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 out. 10 ]
Artigo de periodico
Density Functional theory for Holes in Semiconductors (1997)
Enderlein, R; Sipahi, Guilherme Matos ; Scolfaro, Luísa Maria Ribeiro; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ENDERLEIN, R et al. Density Functional theory for Holes in Semiconductors. Physical Review Letters, v. 79, n. 19, p. 3712-3715, 1997Tradução . . Disponível em: https://doi.org/10.1103/physrevlett.79.3712. Acesso em: 10 out. 2024.
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1997). Density Functional theory for Holes in Semiconductors. Physical Review Letters, 79( 19), 3712-3715. doi:10.1103/physrevlett.79.3712
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density Functional theory for Holes in Semiconductors [Internet]. Physical Review Letters. 1997 ; 79( 19): 3712-3715.[citado 2024 out. 10 ] Available from: https://doi.org/10.1103/physrevlett.79.3712
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Density Functional theory for Holes in Semiconductors [Internet]. Physical Review Letters. 1997 ; 79( 19): 3712-3715.[citado 2024 out. 10 ] Available from: https://doi.org/10.1103/physrevlett.79.3712
Artigo de periodico
Assali and leite respond (1986)
Assali, L. V. C. ; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASSALI, L. V. C. e LEITE, J. R. Assali and leite respond. Physical Review Letters, v. 56, n. 4 , p. 403, 1986Tradução . . Disponível em: https://doi.org/10.1103/physrevlett.56.403. Acesso em: 10 out. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1986). Assali and leite respond. Physical Review Letters, 56( 4 ), 403. doi:10.1103/physrevlett.56.403
NLM
Assali LVC, Leite JR. Assali and leite respond [Internet]. Physical Review Letters. 1986 ;56( 4 ): 403.[citado 2024 out. 10 ] Available from: https://doi.org/10.1103/physrevlett.56.403
Vancouver
Assali LVC, Leite JR. Assali and leite respond [Internet]. Physical Review Letters. 1986 ;56( 4 ): 403.[citado 2024 out. 10 ] Available from: https://doi.org/10.1103/physrevlett.56.403
Artigo de periodico
Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon (1985)
Assali, L. V. C. ; Leite, J. R.
Source: Physical Review Letters. Unidade: IF
Assunto: MICROSCOPIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASSALI, L. V. C. e LEITE, J. R. Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters, v. 55, p. 980-2, 1985Tradução . . Acesso em: 10 out. 2024.
APA
Assali, L. V. C., & Leite, J. R. (1985). Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters, 55, 980-2.
NLM
Assali LVC, Leite JR. Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters. 1985 ;55 980-2.[citado 2024 out. 10 ]
Vancouver
Assali LVC, Leite JR. Microscopic mechanism of hydrogen passivation of acceptor shallow levels in silicon. Physical Review Letters. 1985 ;55 980-2.[citado 2024 out. 10 ]

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