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Filtros : "Fazzio, A" "Reino Unido" Removido: "1996" Limpar

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  • Trabalho de evento-anais periodico

    Theoretical study of defect complexes related with antisities in GaAs (1998)

    Fazzio, A; Janotti, A.; Mota, R.; Piquini, P

    Source: Radiation Effects and Defect in Solids. Conference titles: Symposium on Defect Dependent Processes in Insulators and Semiconductors. Unidade: IF

    Subjects: FÍSICA, FÍSICA NUCLEAR

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      FAZZIO, A et al. Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers. . Acesso em: 14 set. 2024. , 1998

    • APA

      Fazzio, A., Janotti, A., Mota, R., & Piquini, P. (1998). Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. London: Gordon and Breach Science Publishers.

    • NLM

      Fazzio A, Janotti A, Mota R, Piquini P. Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 65-70.[citado 2024 set. 14 ]

    • Vancouver

      Fazzio A, Janotti A, Mota R, Piquini P. Theoretical study of defect complexes related with antisities in GaAs. Radiation Effects and Defect in Solids. 1998 ; 146( 1-4): 65-70.[citado 2024 set. 14 ]

  • Artigo de periodico

    Many-electron treatment for chalcogen complexes in silicon (1990)

    Fazzio, A; Antonelli, A; Ferreira de Paula Junior, H; Canuto, Sylvio

    Source: Semiconductor Science and Technology. Unidade: IF

    Assunto: MATÉRIA CONDENSADA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      FAZZIO, A et al. Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, v. 5 , n. 3 , p. 196-9, 1990Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/5/3/002. Acesso em: 14 set. 2024.

    • APA

      Fazzio, A., Antonelli, A., Ferreira de Paula Junior, H., & Canuto, S. (1990). Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, 5 ( 3 ), 196-9. doi:10.1088/0268-1242/5/3/002

    • NLM

      Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto S. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002

    • Vancouver

      Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto S. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
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