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Artigo de periodico
Many-electron treatment for chalcogen complexes in silicon (1990)
Fazzio, A; Antonelli, A; Ferreira de Paula Junior, H; Canuto, Sylvio
Source: Semiconductor Science and Technology. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FAZZIO, A et al. Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, v. 5 , n. 3 , p. 196-9, 1990Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/5/3/002. Acesso em: 16 out. 2024.
APA
Fazzio, A., Antonelli, A., Ferreira de Paula Junior, H., & Canuto, S. (1990). Many-electron treatment for chalcogen complexes in silicon. Semiconductor Science and Technology, 5 ( 3 ), 196-9. doi:10.1088/0268-1242/5/3/002
NLM
Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto S. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2024 out. 16 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
Vancouver
Fazzio A, Antonelli A, Ferreira de Paula Junior H, Canuto S. Many-electron treatment for chalcogen complexes in silicon [Internet]. Semiconductor Science and Technology. 1990 ;5 ( 3 ): 196-9.[citado 2024 out. 16 ] Available from: https://doi.org/10.1088/0268-1242/5/3/002
Parte de monografia/livro
Correlation effects nad structural stability in si: o, s< and 'N POT.-' (1988)
Antonelli, A; Valle do Amaral, O A; Canuto, Sylvio; Fazzio, A
Source: Current Topics on Semiconductor Physics. Unidade: IF
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ANTONELLI, A et al. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. Current Topics on Semiconductor Physics. Tradução . Singapore: World Scientific, 1988. . . Acesso em: 16 out. 2024.
APA
Antonelli, A., Valle do Amaral, O. A., Canuto, S., & Fazzio, A. (1988). Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In Current Topics on Semiconductor Physics. Singapore: World Scientific.
NLM
Antonelli A, Valle do Amaral OA, Canuto S, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 16 ]
Vancouver
Antonelli A, Valle do Amaral OA, Canuto S, Fazzio A. Correlation effects nad structural stability in si: o, s< and 'N POT.-'. In: Current Topics on Semiconductor Physics. Singapore: World Scientific; 1988. [citado 2024 out. 16 ]
Artigo de periodico
Analysis of pseudo-jahn-teller instability: o, s, and 'N POT.-' In silicon (1987)
Amaral, O A V; Antonelli, A; Fazzio, A
Source: Physical Review B. Unidade: IF
Assunto: FÍSICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AMARAL, O A V e ANTONELLI, A e FAZZIO, A. Analysis of pseudo-jahn-teller instability: o, s, and 'N POT.-' In silicon. Physical Review B, v. 35, n. 12, p. 6450-3, 1987Tradução . . Acesso em: 16 out. 2024.
APA
Amaral, O. A. V., Antonelli, A., & Fazzio, A. (1987). Analysis of pseudo-jahn-teller instability: o, s, and 'N POT.-' In silicon. Physical Review B, 35( 12), 6450-3.
NLM
Amaral OAV, Antonelli A, Fazzio A. Analysis of pseudo-jahn-teller instability: o, s, and 'N POT.-' In silicon. Physical Review B. 1987 ;35( 12): 6450-3.[citado 2024 out. 16 ]
Vancouver
Amaral OAV, Antonelli A, Fazzio A. Analysis of pseudo-jahn-teller instability: o, s, and 'N POT.-' In silicon. Physical Review B. 1987 ;35( 12): 6450-3.[citado 2024 out. 16 ]

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