Dantas, Michel Oliveira da Silva; Galeazzo, Elisabete 
; Peres, Henrique Estanislau Maldonado ; Kopelvski, Maycon Max ; Ramírez Fernandez, Francisco Javier
Source: Journal of Microelectrochemical Systems. Unidade: EP
Subjects: SEMICONDUTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DANTAS, Michel Oliveira da Silva et al. Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique. Journal of Microelectrochemical Systems, v. 17, n. 5, p. 1263-1269, 2008Tradução . . Disponível em: https://doi.org/10.1109/JMEMS.2008.927743. Acesso em: 06 nov. 2024.APA
Dantas, M. O. da S., Galeazzo, E., Peres, H. E. M., Kopelvski, M. M., & Ramírez Fernandez, F. J. (2008). Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique. Journal of Microelectrochemical Systems, 17( 5), 1263-1269. doi:10.1109/JMEMS.2008.927743NLM
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique [Internet]. Journal of Microelectrochemical Systems. 2008 ; 17( 5): 1263-1269.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1109/JMEMS.2008.927743Vancouver
Dantas MO da S, Galeazzo E, Peres HEM, Kopelvski MM, Ramírez Fernandez FJ. Silicon field-emission devices fabricated using the hydrogen implantation-porous silicon (HI-PS) micromachining technique [Internet]. Journal of Microelectrochemical Systems. 2008 ; 17( 5): 1263-1269.[citado 2024 nov. 06 ] Available from: https://doi.org/10.1109/JMEMS.2008.927743
