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Artigo de periodico
Intermolecular energy transfer and photostability of luminescence-tuneable multicolour PMMA films doped with lanthanide-'beta'-diketonate complexes (2011)
Kai, Jiang; Felinto, Maria Claudia França da Cunha ; Nunes, Luiz Antônio de Oliveira ; Malta, Oscar L ; Brito, Hermi Felinto de
Source: Journal of Materials Chemistry. Unidades: IFSC, IQ
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS, ENERGIA (TRANSFERÊNCIA), POLÍMEROS (MATERIAIS)
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KAI, Jiang et al. Intermolecular energy transfer and photostability of luminescence-tuneable multicolour PMMA films doped with lanthanide-'beta'-diketonate complexes. Journal of Materials Chemistry, v. 21, n. 11, p. 3796-3802, 2011Tradução . . Disponível em: https://doi.org/10.1039/c0jm03474f. Acesso em: 31 out. 2024.
APA
Kai, J., Felinto, M. C. F. da C., Nunes, L. A. de O., Malta, O. L., & Brito, H. F. de. (2011). Intermolecular energy transfer and photostability of luminescence-tuneable multicolour PMMA films doped with lanthanide-'beta'-diketonate complexes. Journal of Materials Chemistry, 21( 11), 3796-3802. doi:10.1039/c0jm03474f
NLM
Kai J, Felinto MCF da C, Nunes LA de O, Malta OL, Brito HF de. Intermolecular energy transfer and photostability of luminescence-tuneable multicolour PMMA films doped with lanthanide-'beta'-diketonate complexes [Internet]. Journal of Materials Chemistry. 2011 ; 21( 11): 3796-3802.[citado 2024 out. 31 ] Available from: https://doi.org/10.1039/c0jm03474f
Vancouver
Kai J, Felinto MCF da C, Nunes LA de O, Malta OL, Brito HF de. Intermolecular energy transfer and photostability of luminescence-tuneable multicolour PMMA films doped with lanthanide-'beta'-diketonate complexes [Internet]. Journal of Materials Chemistry. 2011 ; 21( 11): 3796-3802.[citado 2024 out. 31 ] Available from: https://doi.org/10.1039/c0jm03474f
Trabalho de evento-resumo periodico
The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals (2010)
Borrero, L.; Nunes, Luiz Antônio de Oliveira ; Andreeta, Marcelo Rubens Barsi; Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Wojcik, J.; Mascher, P.; Comedi, D.
Source: Journal of Physics : Conference Series. Conference titles: International Conference on Optics of Excitons in Confined Systems - OECS. Unidade: IFSC
Subjects: SEMICONDUTORES, NANOTECNOLOGIA, FOTOLUMINESCÊNCIA, ÓPTICA (PROPRIEDADES;MODELOS), CRISTALOGRAFIA FÍSICA (ESTUDO), ESPECTROSCOPIA RAMAN
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BORRERO, L. et al. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. Journal of Physics : Conference Series. Bristol: Institute of Physics - IOP. Disponível em: https://doi.org/10.1088/1742-6596/210/1/011003. Acesso em: 31 out. 2024. , 2010
APA
Borrero, L., Nunes, L. A. de O., Andreeta, M. R. B., Pusep, Y. A., Guimarães, F. E. G., Wojcik, J., et al. (2010). The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals. Journal of Physics : Conference Series. Bristol: Institute of Physics - IOP. doi:10.1088/1742-6596/210/1/011003
NLM
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG, Wojcik J, Mascher P, Comedi D. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals [Internet]. Journal of Physics : Conference Series. 2010 ; 210( 1):[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/1742-6596/210/1/011003
Vancouver
Borrero L, Nunes LA de O, Andreeta MRB, Pusep YA, Guimarães FEG, Wojcik J, Mascher P, Comedi D. The role of quantum confinement and crystalline structure in excitonic lifetime of silicon nanocrystals [Internet]. Journal of Physics : Conference Series. 2010 ; 210( 1):[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/1742-6596/210/1/011003
Artigo de periodico
Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films (2009)
Zanatta, Antonio Ricardo
Source: Journal of Physics D. Unidade: IFSC
Subjects: FILMES FINOS (PREPARO), FOTOLUMINESCÊNCIA, ALUMÍNIO, ENERGIA, ESPECTROSCOPIA, TEMPERATURA AMBIENTE
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ZANATTA, Antonio Ricardo. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films. Journal of Physics D, v. 42, n. Ja 2009, p. 025109-1-025109-7, 2009Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/42/2/025109. Acesso em: 31 out. 2024.
APA
Zanatta, A. R. (2009). Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films. Journal of Physics D, 42( Ja 2009), 025109-1-025109-7. doi:10.1088/0022-3727/42/2/025109
NLM
Zanatta AR. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films [Internet]. Journal of Physics D. 2009 ; 42( Ja 2009): 025109-1-025109-7.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0022-3727/42/2/025109
Vancouver
Zanatta AR. Effect of thermal annealing treatments on the optical properties of rare-earth-doped AIN films [Internet]. Journal of Physics D. 2009 ; 42( Ja 2009): 025109-1-025109-7.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0022-3727/42/2/025109
Artigo de periodico
Structural and optical properties of CaTi'O IND.3' perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: an experimental and theoretical insight (2009)
Moreira, Mario L.; Paris, Elaine C.; Nascimento, Gabriela S.; Longo, Valéria M.; Sambrano, Julio R.; Mastelaro, Valmor Roberto ; Bernardi, Maria Inês Basso; Andrés, Juan; Varela, José A.; Longo, Elson
Source: Acta Materialia. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, TECNOLOGIA DE MICRO-ONDAS, DIFRAÇÃO POR RAIOS X, ESTRUTURA DOS MATERIAIS, ESPECTROSCOPIA RAMAN, CRESCIMENTO DE CRISTAIS
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MOREIRA, Mario L. et al. Structural and optical properties of CaTi'O IND.3' perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: an experimental and theoretical insight. Acta Materialia, v. 57, n. 17, p. 5174-5185, 2009Tradução . . Disponível em: https://doi.org/10.1016/j.actamat.2009.07.019. Acesso em: 31 out. 2024.
APA
Moreira, M. L., Paris, E. C., Nascimento, G. S., Longo, V. M., Sambrano, J. R., Mastelaro, V. R., et al. (2009). Structural and optical properties of CaTi'O IND.3' perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: an experimental and theoretical insight. Acta Materialia, 57( 17), 5174-5185. doi:10.1016/j.actamat.2009.07.019
NLM
Moreira ML, Paris EC, Nascimento GS, Longo VM, Sambrano JR, Mastelaro VR, Bernardi MIB, Andrés J, Varela JA, Longo E. Structural and optical properties of CaTi'O IND.3' perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: an experimental and theoretical insight [Internet]. Acta Materialia. 2009 ; 57( 17): 5174-5185.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/j.actamat.2009.07.019
Vancouver
Moreira ML, Paris EC, Nascimento GS, Longo VM, Sambrano JR, Mastelaro VR, Bernardi MIB, Andrés J, Varela JA, Longo E. Structural and optical properties of CaTi'O IND.3' perovskite-based materials obtained by microwave-assisted hydrothermal synthesis: an experimental and theoretical insight [Internet]. Acta Materialia. 2009 ; 57( 17): 5174-5185.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/j.actamat.2009.07.019
Artigo de periodico
Optical and dielectric relaxator behaviour of Ba('Zr IND. 0.25''Ti IND. 0.75')'O IND.3' ceramic explained by means of distorted clusters (2009)
Badapanda, T.; Rout, S. K.; Cavalcante, L. S.; Sczancoski, J. C.; Panigrahi, S.; Longo, E.; Siu Li, Máximo
Source: Journal of Physics D. Unidade: IFSC
Subjects: FILMES FINOS, ESTADO SÓLIDO, DIFRAÇÃO POR RAIOS X, FERROELETRICIDADE, CERÂMICA, ESPECTROSCOPIA DE ABSORÇÃO ATÔMICA, FOTOLUMINESCÊNCIA
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BADAPANDA, T. et al. Optical and dielectric relaxator behaviour of Ba('Zr IND. 0.25''Ti IND. 0.75')'O IND.3' ceramic explained by means of distorted clusters. Journal of Physics D, v. 42, n. 17, p. 175414-1-175414-9, 2009Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/42/17/175414. Acesso em: 31 out. 2024.
APA
Badapanda, T., Rout, S. K., Cavalcante, L. S., Sczancoski, J. C., Panigrahi, S., Longo, E., & Siu Li, M. (2009). Optical and dielectric relaxator behaviour of Ba('Zr IND. 0.25''Ti IND. 0.75')'O IND.3' ceramic explained by means of distorted clusters. Journal of Physics D, 42( 17), 175414-1-175414-9. doi:10.1088/0022-3727/42/17/175414
NLM
Badapanda T, Rout SK, Cavalcante LS, Sczancoski JC, Panigrahi S, Longo E, Siu Li M. Optical and dielectric relaxator behaviour of Ba('Zr IND. 0.25''Ti IND. 0.75')'O IND.3' ceramic explained by means of distorted clusters [Internet]. Journal of Physics D. 2009 ; 42( 17): 175414-1-175414-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0022-3727/42/17/175414
Vancouver
Badapanda T, Rout SK, Cavalcante LS, Sczancoski JC, Panigrahi S, Longo E, Siu Li M. Optical and dielectric relaxator behaviour of Ba('Zr IND. 0.25''Ti IND. 0.75')'O IND.3' ceramic explained by means of distorted clusters [Internet]. Journal of Physics D. 2009 ; 42( 17): 175414-1-175414-9.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0022-3727/42/17/175414
Artigo de periodico
In situ photoluminescence study of uncapped in As/GaAs quantum dots (2008)
AbuWaar, Ziad Y.; Marega Junior, Euclydes ; Mortazavi, M.; Salamo, G. J.
Source: Nanotechnology. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, FOTOLUMINESCÊNCIA, ÓPTICA (PROPRIEDADES)
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ABUWAAR, Ziad Y. et al. In situ photoluminescence study of uncapped in As/GaAs quantum dots. Nanotechnology, v. 19, n. 33, p. 335712-1-335712-4, 2008Tradução . . Disponível em: https://doi.org/10.1088/0957-4484/19/33/335712. Acesso em: 31 out. 2024.
APA
AbuWaar, Z. Y., Marega Junior, E., Mortazavi, M., & Salamo, G. J. (2008). In situ photoluminescence study of uncapped in As/GaAs quantum dots. Nanotechnology, 19( 33), 335712-1-335712-4. doi:10.1088/0957-4484/19/33/335712
NLM
AbuWaar ZY, Marega Junior E, Mortazavi M, Salamo GJ. In situ photoluminescence study of uncapped in As/GaAs quantum dots [Internet]. Nanotechnology. 2008 ; 19( 33): 335712-1-335712-4.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0957-4484/19/33/335712
Vancouver
AbuWaar ZY, Marega Junior E, Mortazavi M, Salamo GJ. In situ photoluminescence study of uncapped in As/GaAs quantum dots [Internet]. Nanotechnology. 2008 ; 19( 33): 335712-1-335712-4.[citado 2024 out. 31 ] Available from: https://doi.org/10.1088/0957-4484/19/33/335712
Artigo de periodico
Luminescence in anodic Zr'O IND.2' doped with Eu(III)ions (2008)
Strixino, F. Trivinho; Guimarães, Francisco Eduardo Gontijo ; Pereira, E. C.
Source: Molecular Crystals and Liquid Crystals. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, TERRAS RARAS
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STRIXINO, F. Trivinho e GUIMARÃES, Francisco Eduardo Gontijo e PEREIRA, E. C. Luminescence in anodic Zr'O IND.2' doped with Eu(III)ions. Molecular Crystals and Liquid Crystals, v. 485, n. 1, p. 766-775, 2008Tradução . . Acesso em: 31 out. 2024.
APA
Strixino, F. T., Guimarães, F. E. G., & Pereira, E. C. (2008). Luminescence in anodic Zr'O IND.2' doped with Eu(III)ions. Molecular Crystals and Liquid Crystals, 485( 1), 766-775.
NLM
Strixino FT, Guimarães FEG, Pereira EC. Luminescence in anodic Zr'O IND.2' doped with Eu(III)ions. Molecular Crystals and Liquid Crystals. 2008 ; 485( 1): 766-775.[citado 2024 out. 31 ]
Vancouver
Strixino FT, Guimarães FEG, Pereira EC. Luminescence in anodic Zr'O IND.2' doped with Eu(III)ions. Molecular Crystals and Liquid Crystals. 2008 ; 485( 1): 766-775.[citado 2024 out. 31 ]
Artigo de periodico
Strong violet-blue ligth photoluminescence emission at room temperature in SrZr'O IND.3': joint experimental and theoretical study (2008)
Longo, V. M.; Cavalcante, L. S.; Erlo, R.; Mastelaro, Valmor Roberto ; Figueiredo, A. T.; Sambrano, J. R.; Lázaro, S.; Freitas, A. Z.; Gomes, L.; Vieira Junior, N. D.; Varela, J. A.; Longo, Elson
Source: Acta Materialia. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, MATERIAIS ÓPTICOS, CERÂMICA, CONDUÇÃO
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LONGO, V. M. et al. Strong violet-blue ligth photoluminescence emission at room temperature in SrZr'O IND.3': joint experimental and theoretical study. Acta Materialia, v. 56, n. Ju 2008, p. 2191-2202, 2008Tradução . . Acesso em: 31 out. 2024.
APA
Longo, V. M., Cavalcante, L. S., Erlo, R., Mastelaro, V. R., Figueiredo, A. T., Sambrano, J. R., et al. (2008). Strong violet-blue ligth photoluminescence emission at room temperature in SrZr'O IND.3': joint experimental and theoretical study. Acta Materialia, 56( Ju 2008), 2191-2202.
NLM
Longo VM, Cavalcante LS, Erlo R, Mastelaro VR, Figueiredo AT, Sambrano JR, Lázaro S, Freitas AZ, Gomes L, Vieira Junior ND, Varela JA, Longo E. Strong violet-blue ligth photoluminescence emission at room temperature in SrZr'O IND.3': joint experimental and theoretical study. Acta Materialia. 2008 ; 56( Ju 2008): 2191-2202.[citado 2024 out. 31 ]
Vancouver
Longo VM, Cavalcante LS, Erlo R, Mastelaro VR, Figueiredo AT, Sambrano JR, Lázaro S, Freitas AZ, Gomes L, Vieira Junior ND, Varela JA, Longo E. Strong violet-blue ligth photoluminescence emission at room temperature in SrZr'O IND.3': joint experimental and theoretical study. Acta Materialia. 2008 ; 56( Ju 2008): 2191-2202.[citado 2024 out. 31 ]
Artigo de periodico
Fabrication of novel light-emitting devices based on green-phosphor / conductive-polymer composites (2007)
Chinaglia, Dante Luis; Gozzi, G.; Schimidt, T. F.; Balogh, Débora Terezia; Oliveira Junior, Osvaldo Novais de ; Faria, Roberto Mendonça
Source: Philosophical Magazine Letters. Unidade: IFSC
Subjects: POLÍMEROS (MATERIAIS), EMISSÃO DA LUZ, MATERIAIS COMPÓSITOS, FOTOLUMINESCÊNCIA
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CHINAGLIA, Dante Luis et al. Fabrication of novel light-emitting devices based on green-phosphor / conductive-polymer composites. Philosophical Magazine Letters, v. 87, n. Ju 2007, p. 403-408, 2007Tradução . . Disponível em: https://doi.org/10.1080/09500830701203149. Acesso em: 31 out. 2024.
APA
Chinaglia, D. L., Gozzi, G., Schimidt, T. F., Balogh, D. T., Oliveira Junior, O. N. de, & Faria, R. M. (2007). Fabrication of novel light-emitting devices based on green-phosphor / conductive-polymer composites. Philosophical Magazine Letters, 87( Ju 2007), 403-408. doi:10.1080/09500830701203149
NLM
Chinaglia DL, Gozzi G, Schimidt TF, Balogh DT, Oliveira Junior ON de, Faria RM. Fabrication of novel light-emitting devices based on green-phosphor / conductive-polymer composites [Internet]. Philosophical Magazine Letters. 2007 ; 87( Ju 2007): 403-408.[citado 2024 out. 31 ] Available from: https://doi.org/10.1080/09500830701203149
Vancouver
Chinaglia DL, Gozzi G, Schimidt TF, Balogh DT, Oliveira Junior ON de, Faria RM. Fabrication of novel light-emitting devices based on green-phosphor / conductive-polymer composites [Internet]. Philosophical Magazine Letters. 2007 ; 87( Ju 2007): 403-408.[citado 2024 out. 31 ] Available from: https://doi.org/10.1080/09500830701203149
Artigo de periodico
Optical and electronic properties of AlInGaN/InGaN superlattices (2005)
Rodrigues, S. C. P.; Sipahi, Guilherme Matos ; Silva Junior, E. F.
Source: Microelectronics Journal. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
RODRIGUES, S. C. P. e SIPAHI, Guilherme Matos e SILVA JUNIOR, E. F. Optical and electronic properties of AlInGaN/InGaN superlattices. Microelectronics Journal, v. 36, n. Ju 2005, p. 434-437, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.mejo.2005.02.041. Acesso em: 31 out. 2024.
APA
Rodrigues, S. C. P., Sipahi, G. M., & Silva Junior, E. F. (2005). Optical and electronic properties of AlInGaN/InGaN superlattices. Microelectronics Journal, 36( Ju 2005), 434-437. doi:10.1016/j.mejo.2005.02.041
NLM
Rodrigues SCP, Sipahi GM, Silva Junior EF. Optical and electronic properties of AlInGaN/InGaN superlattices [Internet]. Microelectronics Journal. 2005 ; 36( Ju 2005): 434-437.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.041
Vancouver
Rodrigues SCP, Sipahi GM, Silva Junior EF. Optical and electronic properties of AlInGaN/InGaN superlattices [Internet]. Microelectronics Journal. 2005 ; 36( Ju 2005): 434-437.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/j.mejo.2005.02.041
Trabalho de evento-anais periodico
Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells (2005)
D'Eurydice, Marcel Nogueira; Sipahi, Guilherme Matos ; Rodrigues, S. C. P.; Silva Junior, E. F.
Source: Microelectronics Journal. Conference titles: Workshop of Semiconductor Nanodevices and Nanostructured Materials - NanoSemiMat. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
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ABNT
D'EURYDICE, Marcel Nogueira et al. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. Oxford: Elsevier Science. . Acesso em: 31 out. 2024. , 2005
APA
D'Eurydice, M. N., Sipahi, G. M., Rodrigues, S. C. P., & Silva Junior, E. F. (2005). Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. Oxford: Elsevier Science.
NLM
D'Eurydice MN, Sipahi GM, Rodrigues SCP, Silva Junior EF. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. 2005 ; No 2005( 11): 1029-1033.[citado 2024 out. 31 ]
Vancouver
D'Eurydice MN, Sipahi GM, Rodrigues SCP, Silva Junior EF. Optical properties in p-type doping of nitrides quaternary alloys multiple quantum wells. Microelectronics Journal. 2005 ; No 2005( 11): 1029-1033.[citado 2024 out. 31 ]
Artigo de periodico
Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m (2005)
Rudno-Rudzinski; Ryczko, K; Sek, G; Misiewicz, J; Silva, M J da; Quivy, A. A.
Source: Solid State Communications. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, LASER, FOTOLUMINESCÊNCIA
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ABNT
RUDNO-RUDZINSKI, et al. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, v. 135, n. 4, p. 232-236, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.ssc.2005.04.030. Acesso em: 31 out. 2024.
APA
Rudno-Rudzinski,, Ryczko, K., Sek, G., Misiewicz, J., Silva, M. J. da, & Quivy, A. A. (2005). Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m. Solid State Communications, 135( 4), 232-236. doi:10.1016/j.ssc.2005.04.030
NLM
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Vancouver
Rudno-Rudzinski, Ryczko K, Sek G, Misiewicz J, Silva MJ da, Quivy AA. Photoreflectance study of energy level structure of self-assembled InAs/GaAs quantum dots emitting at 1.3"mu"m [Internet]. Solid State Communications. 2005 ; 135( 4): 232-236.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/j.ssc.2005.04.030
Artigo de periodico
Synthesis and spectroscopy behavior of highly luminescent "Eu POT.3+"-dibenzoymethanate (DBM) complexes with sulfoxide ligands (2005)
Niyama, E; Brito, Hermi Felinto de ; Cremona, Marco; Teotonio, Ercules Epaminondas Sousa; Reyes, R.; Brito, Giancarlo Esposito de Souza; Felinto, Maria Claudia França da Cunha
Source: Spectrochimica Acta part A - Molecular and Biomolecular Spectroscopy. Unidades: IQ, IF
Assunto: FOTOLUMINESCÊNCIA
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ABNT
NIYAMA, E et al. Synthesis and spectroscopy behavior of highly luminescent "Eu POT.3+"-dibenzoymethanate (DBM) complexes with sulfoxide ligands. Spectrochimica Acta part A - Molecular and Biomolecular Spectroscopy, v. 61, n. 11-12, p. 2643-2649, 2005Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6178&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2d136102fd6117146e7a9189ed35ba50. Acesso em: 31 out. 2024.
APA
Niyama, E., Brito, H. F. de, Cremona, M., Teotonio, E. E. S., Reyes, R., Brito, G. E. de S., & Felinto, M. C. F. da C. (2005). Synthesis and spectroscopy behavior of highly luminescent "Eu POT.3+"-dibenzoymethanate (DBM) complexes with sulfoxide ligands. Spectrochimica Acta part A - Molecular and Biomolecular Spectroscopy, 61( 11-12), 2643-2649. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6178&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2d136102fd6117146e7a9189ed35ba50
NLM
Niyama E, Brito HF de, Cremona M, Teotonio EES, Reyes R, Brito GE de S, Felinto MCF da C. Synthesis and spectroscopy behavior of highly luminescent "Eu POT.3+"-dibenzoymethanate (DBM) complexes with sulfoxide ligands [Internet]. Spectrochimica Acta part A - Molecular and Biomolecular Spectroscopy. 2005 ; 61( 11-12): 2643-2649.[citado 2024 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6178&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2d136102fd6117146e7a9189ed35ba50
Vancouver
Niyama E, Brito HF de, Cremona M, Teotonio EES, Reyes R, Brito GE de S, Felinto MCF da C. Synthesis and spectroscopy behavior of highly luminescent "Eu POT.3+"-dibenzoymethanate (DBM) complexes with sulfoxide ligands [Internet]. Spectrochimica Acta part A - Molecular and Biomolecular Spectroscopy. 2005 ; 61( 11-12): 2643-2649.[citado 2024 out. 31 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=6178&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=2d136102fd6117146e7a9189ed35ba50
Artigo de periodico
A novel soluble poly(fluorenylenevinylene) conjugated polymer: synthesis, characterization and application to optoelectronic devices (2005)
Gruber, Jonas ; Li, Rosamaria Wu Chia; Aguiar, Luis Henrique Jatobá de Moraes da Costa; Benvenho, Adriano Reinaldo Viçoto; Lessmann, Rudolf; Hümmelgen, Ivo Alexandre
Source: Journal of Materials Chemistry. Unidade: IQ
Subjects: POLÍMEROS (QUÍMICA ORGÂNICA), FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GRUBER, Jonas et al. A novel soluble poly(fluorenylenevinylene) conjugated polymer: synthesis, characterization and application to optoelectronic devices. Journal of Materials Chemistry, v. 15, n. 4, p. 517-522, 2005Tradução . . Disponível em: https://doi.org/10.1039/b411063c. Acesso em: 31 out. 2024.
APA
Gruber, J., Li, R. W. C., Aguiar, L. H. J. de M. da C., Benvenho, A. R. V., Lessmann, R., & Hümmelgen, I. A. (2005). A novel soluble poly(fluorenylenevinylene) conjugated polymer: synthesis, characterization and application to optoelectronic devices. Journal of Materials Chemistry, 15( 4), 517-522. doi:10.1039/b411063c
NLM
Gruber J, Li RWC, Aguiar LHJ de M da C, Benvenho ARV, Lessmann R, Hümmelgen IA. A novel soluble poly(fluorenylenevinylene) conjugated polymer: synthesis, characterization and application to optoelectronic devices [Internet]. Journal of Materials Chemistry. 2005 ; 15( 4): 517-522.[citado 2024 out. 31 ] Available from: https://doi.org/10.1039/b411063c
Vancouver
Gruber J, Li RWC, Aguiar LHJ de M da C, Benvenho ARV, Lessmann R, Hümmelgen IA. A novel soluble poly(fluorenylenevinylene) conjugated polymer: synthesis, characterization and application to optoelectronic devices [Internet]. Journal of Materials Chemistry. 2005 ; 15( 4): 517-522.[citado 2024 out. 31 ] Available from: https://doi.org/10.1039/b411063c
Trabalho de evento-anais periodico
Design of InGaN/AlInGaN superlattices for white-light device applications (2005)
Rodrigues, S. C. P.; D'Eurydice, Marcel Nogueira; Sipahi, Guilherme Matos ; Silva Junior, E. F.
Source: Microelectronics Journal. Conference titles: Workshop of Semiconductor Nanodevices and Nanostructured Materials - NanoSemiMat. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, S. C. P. et al. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. Oxford: Elsevier Science. . Acesso em: 31 out. 2024. , 2005
APA
Rodrigues, S. C. P., D'Eurydice, M. N., Sipahi, G. M., & Silva Junior, E. F. (2005). Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. Oxford: Elsevier Science.
NLM
Rodrigues SCP, D'Eurydice MN, Sipahi GM, Silva Junior EF. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. 2005 ; No 2005( 11): 1002-1005.[citado 2024 out. 31 ]
Vancouver
Rodrigues SCP, D'Eurydice MN, Sipahi GM, Silva Junior EF. Design of InGaN/AlInGaN superlattices for white-light device applications. Microelectronics Journal. 2005 ; No 2005( 11): 1002-1005.[citado 2024 out. 31 ]
Artigo de periodico
Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces (2004)
Marega Junior, Euclydes ; Oliveira, R. M.; Souza, C. A.; Arakaki, Haroldo; González-Borrero, P. P.
Source: Microelectronics Journal. Unidade: IFSC
Subjects: SEMICONDUTORES, SUPERCONDUTIVIDADE, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MAREGA JUNIOR, Euclydes et al. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. Microelectronics Journal, v. 35, n. Ja 2004, p. 41-43, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00221-0. Acesso em: 31 out. 2024.
APA
Marega Junior, E., Oliveira, R. M., Souza, C. A., Arakaki, H., & González-Borrero, P. P. (2004). Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces. Microelectronics Journal, 35( Ja 2004), 41-43. doi:10.1016/s0026-2692(03)00221-0
NLM
Marega Junior E, Oliveira RM, Souza CA, Arakaki H, González-Borrero PP. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces [Internet]. Microelectronics Journal. 2004 ; 35( Ja 2004): 41-43.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(03)00221-0
Vancouver
Marega Junior E, Oliveira RM, Souza CA, Arakaki H, González-Borrero PP. Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces [Internet]. Microelectronics Journal. 2004 ; 35( Ja 2004): 41-43.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(03)00221-0
Artigo de periodico
Near band-edge optical properties of cubic GaN with and without carbon doping (2004)
Fernandez, J R L; Cerdeira, F; Meneses, E A; Soares, J A N T; Noriega, O C; Leite, J. R.; As, D J; Salazar, D G P; Schikora, D; Lischka, K
Source: Microelectronics Journal. Unidade: IF
Subjects: MATÉRIA CONDENSADA, FILMES FINOS, FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
FERNANDEZ, J R L et al. Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal, 2004Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(03)00226-x. Acesso em: 31 out. 2024.
APA
Fernandez, J. R. L., Cerdeira, F., Meneses, E. A., Soares, J. A. N. T., Noriega, O. C., Leite, J. R., et al. (2004). Near band-edge optical properties of cubic GaN with and without carbon doping. Microelectronics Journal. doi:10.1016/s0026-2692(03)00226-x
NLM
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Vancouver
Fernandez JRL, Cerdeira F, Meneses EA, Soares JANT, Noriega OC, Leite JR, As DJ, Salazar DGP, Schikora D, Lischka K. Near band-edge optical properties of cubic GaN with and without carbon doping [Internet]. Microelectronics Journal. 2004 ;[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(03)00226-x
Artigo de periodico
Influence of the N-[methylpyridyl]acetamide ligands on the photoluminescent properties of Eu(III)-perchlorate complexes (2002)
Teotonio, Ercules Epaminondas de Sousa ; Espínola, José G. P.; Brito, Hermi Felinto de ; Malta, Oscar L ; Oliveira, Severino F.; Faria, Dalva Lúcia Araújo de ; Izumi, Celly M. S.
Source: Polyhedron. Unidade: IQ
Subjects: QUÍMICA INORGÂNICA, EURÓPIO, FOTOLUMINESCÊNCIA, TERRAS RARAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TEOTONIO, Ercules Epaminondas de Sousa et al. Influence of the N-[methylpyridyl]acetamide ligands on the photoluminescent properties of Eu(III)-perchlorate complexes. Polyhedron, v. 21, n. 18, p. 1837-1844, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0277-5387(02)01032-x. Acesso em: 31 out. 2024.
APA
Teotonio, E. E. de S., Espínola, J. G. P., Brito, H. F. de, Malta, O. L., Oliveira, S. F., Faria, D. L. A. de, & Izumi, C. M. S. (2002). Influence of the N-[methylpyridyl]acetamide ligands on the photoluminescent properties of Eu(III)-perchlorate complexes. Polyhedron, 21( 18), 1837-1844. doi:10.1016/s0277-5387(02)01032-x
NLM
Teotonio EE de S, Espínola JGP, Brito HF de, Malta OL, Oliveira SF, Faria DLA de, Izumi CMS. Influence of the N-[methylpyridyl]acetamide ligands on the photoluminescent properties of Eu(III)-perchlorate complexes [Internet]. Polyhedron. 2002 ; 21( 18): 1837-1844.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0277-5387(02)01032-x
Vancouver
Teotonio EE de S, Espínola JGP, Brito HF de, Malta OL, Oliveira SF, Faria DLA de, Izumi CMS. Influence of the N-[methylpyridyl]acetamide ligands on the photoluminescent properties of Eu(III)-perchlorate complexes [Internet]. Polyhedron. 2002 ; 21( 18): 1837-1844.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0277-5387(02)01032-x
Artigo de periodico
Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si (2002)
Araujo, C. Moyses; Fernandez, J. R. L.; Silva, A. Ferreira da; Pepe, I.; Leite, J. R.; Sernelius, Bo E.; Tabata, A.; Persson, C.; Ahuja, R.; As, D. J.; Schikora, D.; Lischka, K.
Source: Microelectronics Journal. Unidade: IF
Assunto: FOTOLUMINESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ARAUJO, C. Moyses et al. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si. Microelectronics Journal, v. 33, n. 4, p. 365-369, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0026-2692(01)00133-1. Acesso em: 31 out. 2024.
APA
Araujo, C. M., Fernandez, J. R. L., Silva, A. F. da, Pepe, I., Leite, J. R., Sernelius, B. E., et al. (2002). Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si. Microelectronics Journal, 33( 4), 365-369. doi:10.1016/s0026-2692(01)00133-1
NLM
Araujo CM, Fernandez JRL, Silva AF da, Pepe I, Leite JR, Sernelius BE, Tabata A, Persson C, Ahuja R, As DJ, Schikora D, Lischka K. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si [Internet]. Microelectronics Journal. 2002 ; 33( 4): 365-369.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(01)00133-1
Vancouver
Araujo CM, Fernandez JRL, Silva AF da, Pepe I, Leite JR, Sernelius BE, Tabata A, Persson C, Ahuja R, As DJ, Schikora D, Lischka K. Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si [Internet]. Microelectronics Journal. 2002 ; 33( 4): 365-369.[citado 2024 out. 31 ] Available from: https://doi.org/10.1016/s0026-2692(01)00133-1

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