Alzeidan, Ahmad 
; Cantalice, Tiago Fernandes de ; Sautter, K E; Vallejo, K D; Simmonds, P J; Quivy, Alain André
Source: Sensors and Actuators A: Physical. Unidade: IF
Assunto: FOTODETECTORES
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ABNT
ALZEIDAN, Ahmad et al. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, v. 374, 2024Tradução . . Acesso em: 02 nov. 2024.APA
Alzeidan, A., Cantalice, T. F. de, Sautter, K. E., Vallejo, K. D., Simmonds, P. J., & Quivy, A. A. (2024). High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical, 374. doi:10.1016/j.sna.2024.115464NLM
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical. 2024 ; 374[citado 2024 nov. 02 ]Vancouver
Alzeidan A, Cantalice TF de, Sautter KE, Vallejo KD, Simmonds PJ, Quivy AA. High-detectivity infrared photodetector based onInAs submonolayer quantum dots grown onGaAs(001) with a 2 × 4 surface reconstruction. Sensors and Actuators A: Physical. 2024 ; 374[citado 2024 nov. 02 ]
