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Filtros : "FEIXES" "IF-FMT" Removido: "IQ" Limpar

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  • Artigo de periodico

    Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate (2005)

    Leite, J. R.; Scolfaro, Luisa Maria Ribeiro

    Source: Journal of Crystal Growth. Unidade: IF

    Subjects: MATÉRIA CONDENSADA, CRISTALOGRAFIA, FEIXES, CRESCIMENTO DE CRISTAIS, ESTRUTURA ELETRÔNICA

    Acesso à fonteDOIHow to cite
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    • ABNT

      LEITE, J. R. e SCOLFARO, Luisa Maria Ribeiro. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, v. 284, n. 3-4, p. 379-387, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.jcrysgro.2005.07.049. Acesso em: 14 out. 2024.

    • APA

      Leite, J. R., & Scolfaro, L. M. R. (2005). Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate. Journal of Crystal Growth, 284( 3-4), 379-387. doi:10.1016/j.jcrysgro.2005.07.049

    • NLM

      Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 out. 14 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049

    • Vancouver

      Leite JR, Scolfaro LMR. Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate [Internet]. Journal of Crystal Growth. 2005 ; 284( 3-4): 379-387.[citado 2024 out. 14 ] Available from: https://doi.org/10.1016/j.jcrysgro.2005.07.049

  • Artigo de periodico

    Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) (2001)

    Miotto, R.; Srivastava, G P; Miwa, R H; Ferraz, A. C.

    Source: Journal of Chemical Physics. Unidade: IF

    Subjects: MICROSCOPIA, FEIXES, ABSORÇÃO, SUPERFÍCIE FÍSICA

    Acesso à fonteHow to cite
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    • ABNT

      MIOTTO, R. et al. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, v. 114, n. 21, p. 9549-9556, 2001Tradução . . Disponível em: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips. Acesso em: 14 out. 2024.

    • APA

      Miotto, R., Srivastava, G. P., Miwa, R. H., & Ferraz, A. C. (2001). Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1). Journal of Chemical Physics, 114( 21), 9549-9556. Recuperado de http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

    • NLM

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 out. 14 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips

    • Vancouver

      Miotto R, Srivastava GP, Miwa RH, Ferraz AC. Comparative study of dissociative adsorption of 'NH IND.3', 'PH IND.3', and 'AsH IND.3' on Si(001)-(2X1) [Internet]. Journal of Chemical Physics. 2001 ; 114( 21): 9549-9556.[citado 2024 out. 14 ] Available from: http://ojps.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JCPSA6000114000021009549000001&idtype=cvips
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