Pereyra, Inés 
; Páez Carreño, Marcelo Nelson ; Tabacniks, Manfredo Harri ; Prado, Rogerio Junqueira; Fantini, Márcia Carvalho de Abreu
Source: Journal of Applied Physics. Unidades: EP, IF
Assunto: FÍSICA
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PEREYRA, Inés et al. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, v. 84, n. 5, p. 2371-2379, 1998Tradução . . Acesso em: 26 jun. 2024.APA
Pereyra, I., Páez Carreño, M. N., Tabacniks, M. H., Prado, R. J., & Fantini, M. C. de A. (1998). Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics, 84( 5), 2371-2379.NLM
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2024 jun. 26 ]Vancouver
Pereyra I, Páez Carreño MN, Tabacniks MH, Prado RJ, Fantini MC de A. Influence of starving plasma regime on carbon content and bonds in 'a-Si ind. 1-x''C ind. x': H thin films. Journal of Applied Physics. 1998 ; 84( 5): 2371-2379.[citado 2024 jun. 26 ]
