Source: Defect and Diffusion Forum. Unidades: EESC, IFSC
Subjects: SILICONE, ESPECTROSCOPIA RAMAN, MUDANÇA DE FASE
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PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart e ZANATTA, Ricardo Antonio. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, v. 258-260, p. 276-281, 2006Tradução . . Acesso em: 12 out. 2024.APA
Pizani, P. S., Jasinevicius, R. G., & Zanatta, R. A. (2006). Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum, 258-260, 276-281.NLM
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 out. 12 ]Vancouver
Pizani PS, Jasinevicius RG, Zanatta RA. Non-hydrostatic pressure induced structural phase transitions of silicon analyzed by Raman scattering. Defect and Diffusion Forum. 2006 ; 258-260 276-281.[citado 2024 out. 12 ]
